Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. C. Dillingham"'
Autor:
E. C. Dillingham, Adam C. Scofield, Ani Khachatrian, Dale McMorrow, S. D. LaLumondiere, C. Affouda, S. P. Buchner, Andrew D. Koehler, Dale Brewe, J. P. Bonsall
Publikováno v:
IEEE Transactions on Nuclear Science. 66:1682-1687
A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a098fe1c3d9cf3f2a7e34f0e41c66a
https://doi.org/10.1109/tns.2019.2910493
https://doi.org/10.1109/tns.2019.2910493
Autor:
E. C. Dillingham, Andrew D. Koehler, Ani Khachatrian, Nicolas J.-H. Roche, S. D. LaLumondiere, J. P. Bonsall, Dale McMorrow, Dale Brewe, Travis J. Anderson, S. P. Buchner
Publikováno v:
IEEE Transactions on Nuclear Science. 66:368-375
Focused, pulsed X-rays are used to generate single-event transients (SETs) in metal–insulator–semiconductor (MIS)-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in order to investigate the mechanisms responsible for SETs. Unlike Schott
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b0934db1c12ba45b52f01b8e4b6917
https://doi.org/10.1109/tns.2018.2885824
https://doi.org/10.1109/tns.2018.2885824
Autor:
Dale McMorrow, Michele Muschitiello, Travis J. Anderson, William T. Lotshaw, Andrew D. Koehler, Veronique Ferlet-Cavrois, Steven C. Moss, Ani Khachatrian, Dale Brewe, S. P. Buchner, S. D. LaLumondiere, Karl D. Hobart, Nicolas J.-H. Roche, Nathan P. Wells, E. C. Dillingham, Petras Karuza, J. P. Bonsall
Publikováno v:
IEEE Transactions on Nuclear Science. 64:97-105
A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al0.3Ga0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640035bfc24fa476dc61e5aa3f2cceb1
https://doi.org/10.1109/tns.2016.2641678
https://doi.org/10.1109/tns.2016.2641678
Autor:
Andrew D. Koehler, Steven C. Moss, Karl D. Hobart, E. C. Dillingham, Michael A. Tockstein, N. J-H. Roche, Travis J. Anderson, Ani Khachatrian, S. D. LaLumondiere, Dale McMorrow, Veronique Ferlet-Cavrois, Petras Karuza, J. P. Bonsall, M. Mushitiello, S. P. Buchner, Nathan P. Wells, Dale Brewe, William T. Lotshaw
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The shapes of single-event transients produced by heavy ions, focused pulsed laser-light, and focused pulsed x-rays in an AlGaN/GaN HEMT were compared.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::590dde5e13f99362b66680ff2c4696bc
https://doi.org/10.1109/radecs.2017.8696147
https://doi.org/10.1109/radecs.2017.8696147
Autor:
Joseph S. Melinger, Nathan P. Wells, Petras Karuza, J. P. Bonsall, Dale Brewe, Andrew D. Koehler, Travis J. Anderson, Nicolas J.-H. Roche, Steven C. Moss, Stephen P. Buchner, E. C. Dillingham, William T. Lotshaw, Dale McMorrow, Paul D. Cunningham, Michael A. Tockstein, Jeffrey H. Warner, Ani Khachatrian, S. D. LaLumondiere
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Single Photon Absorption technique with ultraviolet pulsed laser and focused X-ray beam is used to investigate single event transients in pristine AlGaN/GaN Schottky-Gate and MIS-Gate HEMTs. The results depend strongly on structure of devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479596e81faaaa0f0187b06799686113
https://doi.org/10.1109/radecs.2016.8093196
https://doi.org/10.1109/radecs.2016.8093196