Zobrazeno 1 - 10 of 16 pro vyhledávání: '"E. C. DOUGLAS"'
1
Thermolysis of model compounds for coal. Part 5. Enhancement of free-radical chain rearrangement, cyclization, and hydrogenolysis during thermolysis of surface-immobilized bibenzyl. Implications for coal chemistry
Autor: Marvin L. Poutsma, A.C. Buchanan, T.D.J. Dunstan, E. C. Douglas
Publikováno v: Journal of the American Chemical Society. 108(24)
Condensation of p-HOC/sub 6/H/sub 4/CH/sub 2/CH/sub 2/C/sub 6/H/sub 5/ (15c) with the surface hydroxyls of fumed silica gave a surface-immobilized form of bibenzyl (16c) whose thermolysis was compared with that studied earlier for liquid and gaseous
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc1e87226b6263297b120faa926ddb62
https://pubmed.ncbi.nlm.nih.gov/22283277
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2
High‐current solid‐feed ion source
Autor: J. S. C. Wills, T. Tran Ngoc, E. C. Douglas, T. Taylor
Publikováno v: Review of Scientific Instruments. 61:454-456
A duoPIGatron augmented by magnetic cusp confinement has been equipped with a large‐volume external oven. The oven has operated at temperatures as high as 1100 °C. Beams of lithium, phosphorus, calcium, and bismuth have been extracted with a multi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::52ac1e96e8be5995cf955d67cda7a6c9
https://doi.org/10.1063/1.1141271
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3
Transmission electron microscopy studies of brown and golden titanium nitride thin films as diffusion barriers in very large scale integrated circuits
Autor: E. C. Douglas, J. T. McGinn, Kambiz Pourrezaei, N. Kumar, B. Lee
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:1602-1608
The usefulness of reactively sputtered TiN as a diffusion barrier in the AlTiN/Ti/Si metallization scheme in very large scale integration was reported in a previous publication. Two types of TiN thin films were studied in these experiments. Depending
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e3a1b9d7aeffa96d8c837f68274b6f64
https://doi.org/10.1116/1.575335
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4
Improved Photoresist Patterning over Reflective Topographies Using Titanium Oxynitride Antireflection Coatings
Autor: B. Lee, M. Camacho, E. C. Douglas, T. R. Pampalone
Publikováno v: Journal of The Electrochemical Society. 136:1181-1185
The resolution and linewidth control of photoresist patterns over highly reflective substrates, such as aluminum and tantalum disilicide, are significantly improved by the use of reactive‐sputtered titanium oxynitride as an antireflection coating.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8a20099283d911ca5ea66a8804ff3f8
https://doi.org/10.1149/1.2096849
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5
Growth and properties of TiN and TiOxNy diffusion barriers in silicon on sapphire integrated circuits
Autor: E. C. Douglas, M.G. Fissel, N. Kumar, B. Lee, Kambiz Pourrezaei
Publikováno v: Thin Solid Films. 153:287-301
The usefulness of titanium nitride thin films deposited under different sputter deposition conditions as a diffusion barrier in silicon-to-aluminum contacts was examined. In particular, the effect of oxygen in the barrier film was investigated. The f
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba675db1a6c3db287ea8f700979047e8
https://doi.org/10.1016/0040-6090(87)90190-8
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6
Growth and properties of radio frequency reactively sputtered titanium nitride thin films
Autor: Kambiz Pourrezaei, M.G. Fissel, E. C. Douglas, T. Begley, N. Kumar, B. Lee
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:1778-1782
Polycrystalline thin films of titanium nitride with a resistivity in the range 20–25 μΩ cm have been consistently produced on water‐cooled silicon wafers by using reactive sputtering of a titanium target in Ar/N2 mixture. The variations of resi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8359b782dddabd241e6c25d9963d1f5a
https://doi.org/10.1116/1.574494
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7
Failure mechanisms of TiN thin film diffusion barriers
Autor: Kambiz Pourrezaei, N. Kumar, E. C. Douglas, B. Lee
Publikováno v: Thin Solid Films. 164:417-428
Reactively sputtered TiN has been studied for use as a diffusion barrier in the Al/TiN/Ti/Si metallization scheme in silicon-on-sapphire (SOS) integrated circuits. The diffusion barrier properties of TiN were found to depend critically on the deposit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b7067d196b1d7c400d829769da4ffbef
https://doi.org/10.1016/0040-6090(88)90171-x
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9
Study of the Anomalous Paramagnetic Relaxation Observed at Low Fields in a Kramers Pair Salt
Autor: D. A. Davids, E. C. Douglas
Publikováno v: The Journal of Chemical Physics. 55:1965-1970
Measurements of the paramagnetic relaxation rate were made for various concentrations of Fe+++ ions in K3Co(CN)6 (0.2–1.0 at.%) at low‐field values (60–650 Oe) and low temperatures (1.24
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a25d74c0bab1ddef48280088368288b3
https://doi.org/10.1063/1.1676335
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10
High‐energy implantation of silicon in GaAs
Autor: C. W. Magee, F. Kolondra, S. G. Liu, E. C. Douglas, S. Jain
Publikováno v: Applied Physics Letters. 37:79-81
The impurity profiles and electrical properties of 28Si+‐implanted GaAs at energies up to 1.2 MeV have been studied. Mobility of up to ∼4000 cm2/V s and activation efficiency of ∼75% have been measured in 1‐MeV‐implanted capless‐annealed
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c78189eb6f7c179fc50aafba1f425199
https://doi.org/10.1063/1.91709
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