Zobrazeno 1 - 10
of 13
pro vyhledávání: '"E. C. Carr"'
Autor:
E C, Carr
Publikováno v:
Journal of Advanced Nursing. 26:1073-1079
Pain control in hospital has long been documented as ineffective and problematic. A multi-professional group of clinicians formed to consider how they might continue to improve pain management at a district general hospital. Following a pain audit, i
Publikováno v:
Journal of Applied Physics. 82:2944-2953
We compare measurements of the roughness of silicon(001) wafers cleaned by several methods. The roughness values were obtained using crystal truncation rod (CTR) scattering and atomic force microscopy. Although they do not yield identical results, bo
Publikováno v:
Journal of Applied Physics. 81:211-219
This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process i
Publikováno v:
Clinical Chemistry. 36:607-610
We have developed an HPLC method for measuring carbamylated hemoglobin (CarHb), based on the quantification of valine hydantoin formed from the released NH2-terminal carbamyl valine residue after acid hydrolysis of hemoglobin. In uremia, CarHb is pro
Publikováno v:
Applied Physics Letters. 70:420-422
We discuss the relationship between microstructure and luminescence efficiency for heteroepitaxial films of GaN grown on c-axis sapphire substrates by metalorganic chemical-vapor deposition. We directly characterize the correlation between threading
Publikováno v:
Applied Physics Letters. 66:1492-1494
Atomic oxygen, which can be liberated as an intermediate product in the decomposition of N2, is shown to be effective in removing N previously incorporated in SiO2 layers grown in N2O. This removal results in a N distribution that is sharply peaked a
Autor:
Robert A. Buhrman, E. C. Carr
Publikováno v:
Applied Physics Letters. 63:54-56
We have used chemical depth profiling, with a depth resolution of 10 A, in conjunction with x‐ray photoelectron spectroscopy to study the composition and chemical bonding in thin silicon oxides grown in N2O with both a conventional furnace and a ra
Autor:
E C, Carr
Publikováno v:
Journal of clinical nursing. 5(5)
Reflection can be seen as a useful tool to enable the practitioner to explore the everyday world of clinical practice. This paper reviews the background to reflection and its relevance to nursing in reducing the theory--practice gap and its role in g
Publikováno v:
MRS Proceedings. 428
A series of investigations have been conducted into the properties of N2O silicon oxynitride gate dielectrics, and the various methods of their growth. One of the principle advantages of these oxides is their resistance to interface state generation.
Publikováno v:
Nephrology, dialysis, transplantation : official publication of the European Dialysis and Transplant Association - European Renal Association. 8(6)