Zobrazeno 1 - 10
of 130
pro vyhledávání: '"E. Byk"'
Autor:
Timokhina, I.1 timokhina@ipgg.sbras.ru, Rodina, O.1 rodinaoa@ipgg.sbras.ru
Publikováno v:
Stratigraphy & Geological Correlation. Sep2015, Vol. 23 Issue 5, p495-516. 22p.
Publikováno v:
2018 13th European Microwave Integrated Circuits Conference (EuMIC).
This paper presents a wideband three stage monolithic HPA design and characterizations. It is realized on UMS 0.15 μm GaN technology on SiC substrate. The main challenge was to find a good trade-off between RF characteristics (power, Power Added Eff
Autor:
Didier Floriot, H. Jung, Jan Grünenpütt, V. Di Giacomo-Brunel, Daniel Sommer, E. Byk, Hervé Blanck, P. Fellon, Marc Camiade, Benoit Lambert, J.-P. Viaud, Christophe Chang, G. Mouginot
Publikováno v:
2018 13th European Microwave Integrated Circuits Conference (EuMIC).
This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a $0.15 - \mu \mathrm{m}$ gate-length and it is in the phase of industrial qualification for a target release by the end
Publikováno v:
Microwave Measurement Conference (ARFTG), 2015 85th
Microwave Measurement Conference (ARFTG), 2015 85th, May 2015, Phoenix, United States. pp.1-4, ⟨10.1109/ARFTG.2015.7162905⟩
Microwave Measurement Conference (ARFTG), 2015 85th, May 2015, Phoenix, United States. pp.1-4, ⟨10.1109/ARFTG.2015.7162905⟩
International audience; This paper presents an automatized on-wafer time-domain active load-pull set-up specifically developed for the characterization of High Power GaN High-Electron Mobility Transistors (HEMTs). This set-up is associated to a speci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fd2a30a612fdb006da8904fe7dec391
https://hal-unilim.archives-ouvertes.fr/hal-01286807
https://hal-unilim.archives-ouvertes.fr/hal-01286807
Autor:
Raymond Quéré, Pierre Guillon, Dominique Baillargeat, M. Soulard, E. Laporte, Raphaël Sommet, David Lopez, E. Byk, Serge Verdeyme
Publikováno v:
Microwave Symposium Digest, 2002 IEEE MTT-S International
Microwave Symposium Digest, 2002 IEEE MTT-S International, 2002, Unknown, Unknown Region. pp.2085--2088
Microwave Symposium Digest, 2002 IEEE MTT-S International, 2002, Unknown, Unknown Region. pp.2085--2088
In this paper, a global method is proposed to characterize the electrothermal behavior of multi-fingered Pseudomorphic High Electron-Mobility Transistors (PHEMTs). The method is based on the coupling of circuit, electromagnetic and thermal softwares.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99508ecbab765971a273e3a24e637a46
https://hal.archives-ouvertes.fr/hal-01279263
https://hal.archives-ouvertes.fr/hal-01279263
Akademický článek
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Publikováno v:
Philippine Journal of Science. Apr2024, Vol. 153 Issue 2, p619-629. 11p.
Publikováno v:
Pigment & Resin Technology; 2024, Vol. 53 Issue 6, p866-881, 16p
Publikováno v:
International Journal of Humanoid Robotics; Jun2024, Vol. 21 Issue 3, p1-18, 18p
Autor:
Jäntschi, Lorentz, Louzazni, Mohamed
Publikováno v:
Mathematical & Computational Applications; Feb2024, Vol. 29 Issue 1, p4, 13p