Zobrazeno 1 - 10
of 62
pro vyhledávání: '"E. Buhrig"'
Publikováno v:
Advanced Engineering Materials. 6:554-557
The Vertical Gradient Freeze (VGF) technique is an important method for growing high quality compound semiconductors such as GaAs. Results obtained with a novel VGF set-up developed for the growth under influence of a rotating magnetic field (RMF) an
Publikováno v:
Crystal Research and Technology. 35:911-919
The doping of germanium with zinc from a remote, temperature-stabilized source was studied under microgravity. A nominally undoped Ge-crystal was grown by the Gradient-Freeze technique with the melt surface being in permanent contact with a gaseous a
Publikováno v:
Materials Science and Engineering: B. 66:97-101
Silicon-doped GaAs crystals with free carrier concentrations between 2×1017 and 3×1018 cm−3 were grown successfully with and without B2O3-coating using the Vertical Gradient Freeze method. Growth experiments with full encapsulation (FE-VGF) of th
Publikováno v:
Crystal Research and Technology. 34:189-195
oriented GaAs single crystals with carbon concentrations in the range of 10 14 to 10 16 cm -3 were grown by the vertical Gradient-Freeze-Method (VGF) in sealed quartz glass ampoules. The stable isotope 13 C was used as doping material. Because of the
Publikováno v:
Materials Science and Engineering: B. 44:248-251
Copyright (c) 1997 Elsevier Science S.A. All rights reserved. Semi-insulating 2 GaAs single crystals have been grown using the vertical gradient freeze (VGF) method. The melt was completely encapsulated using B 2 O 3 (LE-VGF) to minimize the interact
Publikováno v:
Materials Science and Engineering: B. 28:87-90
Undoped GaAs crystals were grown by the vertical gradient freeze technique in a multizone furnace. By optimization of the growth equipment and the thermodynamic conditions, crystals were obtained with a low density of microdefects and dislocations (e
Publikováno v:
Crystal Research and Technology. 29:K12-K16
Publikováno v:
Crystal Research and Technology. 29:549-554
Investigations of the equilibrium vapour pressure over GaAs were carried out by a Bourdon manometer in the temperature range of 1170–1260 °C. By means of this method it is possible to measure the vapour pressure in a closed system with high accura
Publikováno v:
Crystal Research and Technology. 27:599-607
The fundamentals of the gradient freezing process were dealt with in the first part of this publication. The second part describes aspects of the thermal technology of the process. Temperature measurements in model crystals and temperature field calc
Publikováno v:
Crystal Research and Technology. 27:351-359
In the gradient freezing process crystal growth is fully controlled by influencing the thermal conditions. The method described in this publication combines measurements with Si phantoms with their modelling by calculation and the extrapolation of th