Zobrazeno 1 - 10
of 775
pro vyhledávání: '"E. Beyne"'
Autor:
F. Nagano, F. Inoue, A. Phommahaxay, L. Peng, F. Chancerel, H. Naser, G. Beyer, A. Uedono, E. Beyne, S. De. Gendt, S. Iacovo
To obtain reliable 3D stacking, a void-free bonding interface should be obtained during wafer-to-wafer direct bonding. Historically, SiO2 is the most studied dielectric layer for direct bonding applications, and it is reported to form voids at the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd0644e2ea0e96d46412ed4c60321b0c
https://lirias.kuleuven.be/handle/20.500.12942/719992
https://lirias.kuleuven.be/handle/20.500.12942/719992
Autor:
R. Chen, M. Lofrano, G. Mirabelli, G. Sisto, S. Yang, A. Jourdain, F. Schleicher, A. Veloso, O. Zografos, P. Weckx, G. Hiblot, G. Van der Plas, G. Hellings, J. Ryckaert, E. Beyne
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6de2c189d547620a20fa7349bceaab9b
https://doi.org/10.1109/iedm45625.2022.10019349
https://doi.org/10.1109/iedm45625.2022.10019349
Autor:
A. Veloso, G. Eneman, P. Matagne, B. Vermeersch, A. Jourdain, H. Arimura, B. O'Sullivan, R. Chen, A. De Keersgieter, E. Simoen, D. Radisic, Y. Oniki, A. Laffitte, S. Brus, E. Beyne, E. Dentoni Litta, N. Horiguchi
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a79086230a5230b81cef74e3d9866df
https://doi.org/10.1109/iedm45625.2022.10019521
https://doi.org/10.1109/iedm45625.2022.10019521
Autor:
R. Chen, G. Sisto, M. Stucchi, A. Jourdain, K. Miyaguchi, P. Schuddinck, P. Woeltgens, H. Lin, N. Kakarla, A. Veloso, D. Milojevic, O. Zografos, P. Weckx, G. Hellings, G. Van Der Plas, J. Ryckaert, E. Beyne
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e8999a3bf4a73fc76a5aace1823e48e
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830328
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830328
Autor:
M. Peeters, S. Sinha, X. Sun, C. Desset, G. Gramegna, J. Slabbekoorn, P. Bex, N. Pinho, T. Webers, D. Velenis, A. Miller, N. Collaert, G. Van der Plas, E. Beyne, M. Huynen, R. Broucke
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a83b41766355426f0784d538a739e55
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830480
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830480
Autor:
K. Serbulova, S.-H. Chen, G. Hellings, A. Veloso, A. Jourdain, D. Linten, J. De Boeck, G. Groeseneken, J. Ryckaert, G. Van Der Plas, E. Beyne, E. Dentoni Litta, N. Horiguchi
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6acbde87a8078012b91bae9a4efd1e56
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830146
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830146
Autor:
A. Veloso, A. Jourdain, D. Radisic, R. Chen, G. Arutchelvan, B. O'Sullivan, H. Arimura, M. Stucchi, A. De Keersgieter, M. Hosseini, T. Hopf, K. D'have, S. Wang, E. Dupuy, G. Mannaert, K. Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, T. Schram, B. Briggs, C. Lorant, E. Rosseel, A. Hikavyy, R. Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, K. Devriendt, B. T. Chan, S. Demuynck, G. Hiblot, G. Van der Plas, J. Ryckaert, G. Beyer, E. Dentoni Litta, E. Beyne, N. Horiguchi
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fe65e0b6bd182b564dfefec2e7bf7a2
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830177
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830177
Akademický článek
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Publikováno v:
Microelectronic Engineering. :111947
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b79960269c3fea094cf027fab0495ae
https://doi.org/10.1016/j.mee.2023.111947
https://doi.org/10.1016/j.mee.2023.111947
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f6308d4fa2df5fbcdbb20c04dd9cd01
https://doi.org/10.1109/ectc51906.2022.00268
https://doi.org/10.1109/ectc51906.2022.00268