Zobrazeno 1 - 10
of 13
pro vyhledávání: '"E. Baudelot"'
Autor:
Olivier Graesslin, F. Dedecker, E. Derniaux, E. Baudelot, Pierre-François Ceccaldi, F. Montilla, René Gabriel
Publikováno v:
La Revue Sage-Femme. 5:88-94
Journal de Gynecologie Obstetrique et Biologie de la Reproduction - Vol. 35 - N° 1 - p. 28-34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e85da673628cfc901e77973e40f146b9
https://doi.org/10.1016/s1637-4088(06)76035-7
https://doi.org/10.1016/s1637-4088(06)76035-7
Publikováno v:
Journal de gynecologie, obstetrique et biologie de la reproduction. 35(1)
To study risk factors and perinatal outcomes in short interpregnancy intervals.Retrospective study, between 1995 and 2001, comparing women with short interpregnancy intervals (6 months, n = 192) and women controls (interpregnancy intervals between 18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::49476f7081781abbc9514b3dec9e562a
https://pubmed.ncbi.nlm.nih.gov/16446609
https://pubmed.ncbi.nlm.nih.gov/16446609
Autor:
U. Weinert, R. Schorner, E. Baudelot, Dethard Peters, Peter Friedrichs, K.O. Dohnke, H. Mitlehner, D. Stephani
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. In this paper, MOSFETs an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79ea757ab358bfed5ecff79260a1a7a9
https://doi.org/10.1109/ispsd.2000.856809
https://doi.org/10.1109/ispsd.2000.856809
Autor:
E. Baudelot, Y. C. Gerstenmaier
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173633
GTO (gate-turn-off-thyristor) turn-on failure in inverter circuits for traction drives is investigated by mixed-mode 2D electrothermal device and circuit simulation. Whereas GTO turn-off failure has already been analysed extensively in the past, in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb01ad5f5dc2e7c493621cf116cf6b28
https://doi.org/10.1007/978-3-7091-6619-2_89
https://doi.org/10.1007/978-3-7091-6619-2_89
Autor:
E. Baudelot, René Gabriel, C. Merle, Pierre-François Ceccaldi, C. Martin-Morille, F Bancheri, Olivier Graesslin, Guillaume Ducarme
Publikováno v:
Journal de Gynécologie Obstétrique et Biologie de la Reproduction. 33:350
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e658351f90bd56bb3a22a3ae06465000
https://doi.org/10.1016/s0368-2315(04)96486-1
https://doi.org/10.1016/s0368-2315(04)96486-1
Autor:
E. Baudelot
Publikováno v:
Annals and Magazine of Natural History. 14:280-283
(1864). XXXIV.—On the influence of the nervous system on the respiration of insects. Annals and Magazine of Natural History: Vol. 14, No. 82, pp. 280-283.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51edddd31c57de6b17ffa46177a2065b
https://doi.org/10.1080/00222936408681709
https://doi.org/10.1080/00222936408681709
Autor:
E. Baudelot
Publikováno v:
Annals and Magazine of Natural History. 15:78-80
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::846ab555107f80436cb09d2e8a26bf69
https://doi.org/10.1080/00222936508681766
https://doi.org/10.1080/00222936508681766
Publikováno v:
Electronics Letters. 18:546
The drain-current/drain-voltage characteristics of a MOS-gated four-layered device are compared in different circuit configurations. A significant improvement of the on-resistance with MOS-gate control is observed under working conditions different f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20b59eaf137ddd462a15ff933c2bf711
https://doi.org/10.1049/el:19820370
https://doi.org/10.1049/el:19820370
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