Zobrazeno 1 - 10
of 14
pro vyhledávání: '"E. BEARZI"'
Publikováno v:
Materials Science and Engineering: B. 28:421-424
In this study, non-intentionally doped Al x In 1−x As layers lattice matched to InP grown by low pressure metal/organic chemical vapor deposition have been characterized. We show the presence of a deep level located at E c −0.62 eV associated wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::862d3f951bb0d284b8d1e53fa2e5fe4b
https://doi.org/10.1016/0921-5107(94)90097-3
https://doi.org/10.1016/0921-5107(94)90097-3
Autor:
M. Oustric, Michel Gendry, Taha Benyattou, M. Pitaval, Gérard Guillot, G. Hollinger, Jean-Christophe Harmand, Olivier Marty, E. Bearzi, M. Quillec
Publikováno v:
Scopus-Elsevier
Optical measurements and Transmission Electron Microscopy (TEM) were performed on Low Temperature (LT)-AlInAs layers grown by MBE at 400/spl deg/C and compared with AlInAs grown at 530/spl deg/C. An anisotropic composition modulation is observed alon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0395637a004a9c0d408ac70d82be42db
https://doi.org/10.1109/iciprm.1996.491923
https://doi.org/10.1109/iciprm.1996.491923
Autor:
Taha Benyattou, E. Bearzi, Pierre Viktorovitch, Gérard Guillot, Jean-Christophe Harmand, M. Pitaval, Michel Gendry, M. Oustric, Charles Mevaa, Xavier Letartre, M. Quillec, Olivier Marty, G. Hollinger
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
We have investigated the origin of the semi-insulating (SI) behaviour of low-temperature In/sub 0.52/Al/sub 0.48/As by correlating electrical and structural properties of epilayers grown by MBE on InP in the 300/spl deg/C-565/spl deg/C temperature ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cec759355a460fd19ceb80959936373
https://doi.org/10.1109/iciprm.1996.492038
https://doi.org/10.1109/iciprm.1996.492038
Autor:
M.F. Nuban, F. Ducroquet, Kyushik Hong, E. Bearzi, C. Klingelhofer, Dimitris Pavlidis, S.K. Krawczyk, Gérard Guillot
Publikováno v:
Seventh International Conference on Indium Phosphide and Related Materials.
Optimum growth conditions were determined for InAlAs/InP heterostructure materials based on scanning photoluminescence (SPL), structural and electrical characteristics of wafers. The impact of MOCVD growth parameters such as susceptor rotating speed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ddb1379f09f8839588f12dacc882c72
https://doi.org/10.1109/iciprm.1995.522124
https://doi.org/10.1109/iciprm.1995.522124
Autor:
M. Pitaval, E. Bearzi, T. Benyattou, Gérard Guillot, Jean-Christophe Harmand, O. Marty, Catherine Bru-Chevallier
Publikováno v:
Scopus-Elsevier
At a low MBE growth temperature (400°C), an anisotropic composition modulation has been observed by Transmission Electron Microscopy (TEM) on AIlnAs layers. Optical measurements have been performed on these samples and compared with classical AllnAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62e946dd29630a088f80877794454ac7
https://doi.org/10.1557/proc-417-271
https://doi.org/10.1557/proc-417-271
Autor:
Gérard Guillot, Jean-Christophe Harmand, Catherine Bru-Chevallier, Y. Baltagi, Taha Benyattou, E. Bearzi
Publikováno v:
Scopus-Elsevier
We have performed low temperature photoreflectance spectra on several MBE-InAlAs layers lattice matched to InP. Unusual lineshapes of PR spectra are observed at temperatures below 40K, characterized by a step at the InAlAs band gap energy. This step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1544e8390ed09f87f54b12aed5967894
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029735460&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029735460&partnerID=MN8TOARS
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