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Publikováno v:
Journal of Nanostructures, Vol 3, Iss 4, Pp 411-414 (2013)
The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 t
Externí odkaz:
https://doaj.org/article/fded045173a7443ea61da8889116fdea
Publikováno v:
Optical and Quantum Electronics. 47:1739-1749
In this work, the effect of porous silicon substrates with various structures on response in ultraviolet range of a zinc oxide nanowire based heterojunction ultraviolet detectors was studied. This was realized through modifications made in bandgap of
Publikováno v:
Renewable Energy. 60:246-255
Zinc oxide (ZnO) nanowire electrodes which were grown on different seed layers and examination of their significant effects on the performance of dye sensitized solar cells were studied. Through chemical bath deposition process, the ZnO nanowires wer
Publikováno v:
Proceedings of the ISES Solar World Congress 2015.
Autor:
F. Dehghan Nayeri, E. Asl Soleimani
Publikováno v:
Experimental Techniques. 38:13-20
Aligned ZnO nanowires (NWs) were synthesized by low-temperature wet chemical bath deposition (CBD) technique on indium tin oxide (ITO)-coated glass substrates using c-axis orientated ZnO and AZO (Al-doped ZnO) seed layers through the RF sputtering de
Publikováno v:
Carbon. 48:2493-2500
Fabrication of branched tree-like carbon nanostructures has been carried out by means of a sequential hydrogenation and growth process in a direct-current plasma enhanced chemical vapor deposition unit. The field emission characteristic of the tree-l
Autor:
H. Hosseinzadegan, Yaser Abdi, E. Asl Soleimani, Shams Mohajerzadeh, Yashar Komijani, Javad Koohsorkhi
Publikováno v:
Carbon. 44:2797-2803
Fabrication of novel self-defined gated field-emission devices on silicon substrates using vertically grown carbon nano-tubes (CNT) is reported. Carbon nano-tubes are grown in a PECVD reactor from the Ni catalyst islands at a pressure of 1.6 Torr wit
Autor:
Yaser Abdi, N. Izadi, K. Zandi, S. Mohajerzadeh, E. Asl Soleimani, Ezatollah Arzi, Saber Haji
Publikováno v:
The European Physical Journal Applied Physics. 35:7-12
Anisotropic etching of silicon is achieved in the presence of ultra-violet exposure in a solution containing hydrofluoric/nitric/acetic acids (HNA). The HNA solution is typically used for polishing silicon and etching polysilicon due to its isotropic
Autor:
S. Mohajerzadeh, H. Hosseinzadegan, E. Asl Soleimani, Jaber Derakhshandeh, Henry H. Radamson, Yaser Abdi
Publikováno v:
Materials Science and Engineering: B. :354-358
PECVD-grown carbon nanotubes on (100)silicon substrates have been studied and exploited for electron emission applications. After the growth of vertical CNT's [Y. Abdi, J. Koohsorkhi, J. Derakhshan ...