Zobrazeno 1 - 10
of 112
pro vyhledávání: '"E. Alptekin"'
Autor:
Kaya, Durmus, Yagmur, E. Alptekin, Yigit, K. Suleyman, Kilic, Fatma Canka, Eren, A. Salih, Celik, Cenk
Publikováno v:
In Energy Conversion and Management 2008 49(6):1662-1673
Autor:
Sema E. Alptekin
Publikováno v:
1997 Annual Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1201592b4d2f21896be91eeed3599cf4
https://doi.org/10.18260/1-2--6508
https://doi.org/10.18260/1-2--6508
Akademický článek
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Publikováno v:
IJIREEICE. 4:508-513
Power systems are being expanded day by day with a more complex structure. The system topology always changes due to faults and/or operation requirements. Therefore; malfunctions might occur in the protection system which is one of the most important
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d580b311987d49b2ed5d6ac8dce643d
https://doi.org/10.17148/ijireeice.2016.45117
https://doi.org/10.17148/ijireeice.2016.45117
Akademický článek
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Akademický článek
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Autor:
Durmuş Kaya, K. Suleyman Yigit, A. Salih Eren, E. Alptekin Yagmur, Fatma Çanka Kılıç, Cenk Celik
Publikováno v:
Energy Conversion and Management. 49:1662-1673
In this paper, “energy efficiency” studies, done in a big industrial facility’s pumps, are reported. For this purpose; the flow rate, pressure and temperature have been measured for each pump in different operating conditions and at maximum loa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc83018d585b3e44d04528e482690f94
https://doi.org/10.1016/j.enconman.2007.11.010
https://doi.org/10.1016/j.enconman.2007.11.010
Autor:
E. Engbrecht, Edward P. Maciejewski, Christopher D. Sheraw, R. Divakaruni, Zhengwen Li, Allen H. Gabor, L. Economikos, Fernando Guarin, N. Zhan, H-K Lee, MaryJane Brodsky, Kenneth J. Stein, Siyuranga O. Koswatta, Y. Yang, Byeong Y. Kim, J. Hong, A. Bryant, Herbert L. Ho, Ruqiang Bao, Nicolas Breil, Babar A. Khan, E. Woodard, W-H. Lee, C-H. Lin, A. Levesque, Kevin McStay, V. Basker, Viraj Y. Sardesai, C. Tran, A. Ogino, Reinaldo A. Vega, C. DeWan, Shreesh Narasimha, J-J. An, Amit Kumar, A. Aiyar, Ravikumar Ramachandran, W. Wang, X. Wang, W. Nicoll, D. Hoyos, A. Friedman, Barry Linder, Yongan Xu, E. Alptekin, Cathryn Christiansen, S. Polvino, Han Wang, Scott R. Stiffler, G. Northrop, S. Saudari, J. Rice, Saraf Iqbal Rashid, Sunfei Fang, Michael V. Aquilino, Z. Ren, B. Kannan, Geng Wang, Noah Zamdmer, T. Kwon, Paul D. Agnello, Hasan M. Nayfeh, S. Jain, Robert R. Robison, M. Hasanuzzaman, J. Cai, L. Lanzerotti, D. Wehelle-Gamage, Basanth Jagannathan, J. Johnson, E. Kaste, Kai Zhao, Huiling Shang, Carl J. Radens, Shariq Siddiqui, Y. Ke, D. Ferrer, Ximeng Guan, D. Conklin, K. Boyd, K. Henson, Siddarth A. Krishnan, Bernard A. Engel, H. Dong, S. Mahajan, Unoh Kwon, Dominic J. Schepis, William Y. Chang, Liyang Song, Brian J. Greene, Chengwen Pei, S.-J. Jeng, Clevenger Leigh Anne H, Vijay Narayanan, C. Zhu, Wai-kin Li, Henry K. Utomo, Wei Liu, Dureseti Chidambarrao
Publikováno v:
2014 IEEE International Electron Devices Meeting.
We present a fully integrated 14nm CMOS technology featuring finFET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs. This SOI finFET architecture is integrated with a 4th generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6233530b0b3fd6ddc14276a018716523
https://doi.org/10.1109/iedm.2014.7046977
https://doi.org/10.1109/iedm.2014.7046977
Autor:
Philip J. Oldiges, Hemanth Jagannathan, Kangguo Cheng, Christopher Prindle, C.-C. Yeh, R. Divakaruni, S. Kanakasabaphthy, Derrick Liu, Sean D. Burns, P. Montanini, T. Gow, Huiming Bu, Abhijeet Paul, Terry A. Spooner, Richard G. Southwick, Jin Cho, M. Celik, Mukesh Khare, Donald F. Canaperi, Young-Kwan Park, H. Mallela, Ravikumar Ramachandran, Bomsoo Kim, Dinesh Gupta, Balasubramanian S. Pranatharthi Haran, R. Kambhampati, M. Weybright, W. Yang, Vamsi Paruchuri, Tae-Chan Kim, R. Sampson, K. Kim, D. Chanemougame, John Iacoponi, Jay W. Strane, Ruilong Xie, D.I. Bae, Injo Ok, Matthew E. Colburn, T. Hook, Kang-ill Seo, Lars W. Liebmann, V. Sardesai, Hoon Kim, Neeraj Tripathi, H. Shang, M. Mottura, Reinaldo A. Vega, B. Hamieh, D. McHerron, Theodorus E. Standaert, Ju-Hwan Jung, S. Nam, E. Alptekin, Soon-Cheon Seo, Dechao Guo, J. G. Hong, Gen Tsutsui, Andreas Scholze, J. Jenq, Xiao Sun, Walter Kleemeier, James H. Stathis, Geum-Jong Bae
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we present a 10nm CMOS platform technology for low power and high performance applications with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fdd9e37b1ad7ef1b69d8d55e103e9fa
https://doi.org/10.1109/icsict.2014.7021207
https://doi.org/10.1109/icsict.2014.7021207