Zobrazeno 1 - 10
of 10
pro vyhledávání: '"E. A. Tyavlovskaya"'
Autor:
E. V. Stankevich, E. A. Tyavlovskaya
Publikováno v:
Journal of Applied Spectroscopy. 77:680-685
Experimental data are presented from studies of the structure and bond type of carbon atoms in amorphous carbon-nickel films deposited from pulsed vacuum-arc discharge plasma sources. X-ray photoelectron spectroscopy was used. The characteristics of
Publikováno v:
Glass and Ceramics. 66:240-244
Silicate glasses with additions of cerium and titanium oxides are studied. Such glasses are of interest for manufacturing electric lights for automobile headlights and heat-stable light filters. It is established that the characteristic yellow-orange
Publikováno v:
Thin Solid Films. 516:1464-1467
The silica sol–gel films with copper selenide produced by the selenization of metallic copper nanoparticles were fabricated. The composition of the films was studied with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and optical
Publikováno v:
Semiconductors. 37:636-640
Experimental data on the distribution and atomic fractions of elements in Bi2Te2.94Se0.06, Bi2Te2.88Se0.12, Bi1.99Sn0.01Te2.94Se0.06, and Bi1.99Sn0.01Te2.88Se0.12 are discussed; these data were obtained using X-ray electron-microprobe analysis and X-
Publikováno v:
Journal of Applied Spectroscopy. 67:1050-1053
The interaction of elements near the interface during epitaxial growth of monocrystalline GaAs films through an aluminum layer is investigated by the methods of x-ray photoelectronic spectroscopy and secondary-ion mass spectroscopy.
Publikováno v:
Journal of Applied Spectroscopy. 66:154-158
Using the method of x-ray photoelectronic spectroscopy, we investigated of the interaction of gold-containing contact layers and indium phosphide in the process of thermal burning-in. We determined the dependence of the depth of the InP layer that ha
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 139:1-5
Small clusters of PbS were prepared by the method of chemical precipitation in a solution from long-chain thiols and lead ions. In the different steps of precipitation we follow the formation of ∼1–2 nm clusters with a pronounced quantum size eff
Publikováno v:
Journal of Applied Spectroscopy. 63:200-202
Publikováno v:
Physica Status Solidi (a). 82:399-403
Structural perfection are studied of GaAs selective regions as grown in Si substrate windows on (100) and (111) GaAs nucleation wafers. The dislocation density distributions across the thickness and over the surface of 300 × 300 μm2 epitaxially gro