Zobrazeno 1 - 2
of 2
pro vyhledávání: '"E. A. Tatokchin"'
Publikováno v:
Vestnik Voronežskogo Gosudarstvennogo Universiteta Inženernyh Tehnologij, Vol 79, Iss 2, Pp 101-106 (2017)
Development of the modern educational technologies caused by broad introduction of comput-er testing and development of distant forms of education does necessary revision of methods of an examination of pupils. In work it was shown, need transition t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb40c729895933323f56daedba50ab93
https://doi.org/10.20914/2310-1202-2017-2-101-106
https://doi.org/10.20914/2310-1202-2017-2-101-106
Publikováno v:
Vestnik Voronežskogo Gosudarstvennogo Universiteta Inženernyh Tehnologij, Vol 0, Iss 2, Pp 78-86 (2016)
Mathematical model of kinetics of charge deep levels in the forbidden band of the semiconductor, which takes into account the processes of carriers charge exchange between deep levels and both allowed bands, which adequately describes the nature of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14b0d84ba75c48c0e39a12e3fe6e51ed
https://doi.org/10.20914/2310-1202-2016-2-78-86
https://doi.org/10.20914/2310-1202-2016-2-78-86