Zobrazeno 1 - 6
of 6
pro vyhledávání: '"E. A. Kelm"'
Publikováno v:
SPIE Proceedings.
In this work a non-destructive method for measuring the thickness of the dielectric layers consisting of silicon dioxide and silicon nitride has been developed using a scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrome
Publikováno v:
Semiconductors. 45:1399-1403
Single-crystal samples of cationic clathrates in the Sn-In-As-I system with different indium contents have been synthesized. Their crystal structure has been analyzed and their thermoelectric properties have been measured. These compounds are found t
Publikováno v:
Russian Chemical Bulletin. 58:746-750
The solid solution Sn24AsxP19.3-xI8 in the range of compositions x from 0 to 16 was synthesized. The crystal structure was refined for seven compositions of the solid solution at —100 °C. All samples crystallize in the cubic space group Pm3 n with
Publikováno v:
SPIE Proceedings.
During failure analysis of modern integrated circuits it might be necessary to carry out investigations, including both analysis of the die topology and the input of electrical signals on its contact pads. However, during access to the die the contac
Autor:
B. S. Alstodt, A. A. Benedetti-Pichler, N. L�vgren, C. H. Liberalli, G. Denig�s, I. M. Kolthoff, F. S. Griffith, A. Martini, N. A. Tananajew, A. Ginzburg, E. Heyman, Lucy F. Kerley, G. Nilsson, E. F. Kelm, J. A. Wilkinson
Publikováno v:
Zeitschrift f�r Analytische Chemie. 121:211-218
Autor:
E. C. Kelm
Publikováno v:
Review of Scientific Instruments. 39:775-776