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pro vyhledávání: '"E. A. Gutieirrez-D"'
Autor:
Daniel Durini, V. Gomez, F. J. De la Hidalga, D. Ferrusca, I. Martinez, M. Velazquez, Omar Lopez-L, E. A. Gutieirrez-D
Publikováno v:
CCE
Since Moore's law has promoted a rapid evolution of FET technologies sometimes, key aspects stay unnoticed while novel nodes appear at the horizon. In this manuscript we present a study comparing the performance of the 65 nm MOSFET and the 14 nm SOI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4be62648725aec25e5bc8e3751976e2
https://doi.org/10.1109/cce50788.2020.9299192
https://doi.org/10.1109/cce50788.2020.9299192
