Zobrazeno 1 - 10
of 20
pro vyhledávání: '"E. A. Evropeytsev"'
Publikováno v:
Semiconductors. 53:2085-2089
We have studied optical properties of site-controlled GaN nanocolumns (NCs) with an insertion of InGaN QW grown on the micro-cone patterned substrate. Time-resolved photoluminescence spectroscopy reveals two bands emission. Comparison of these spectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2be4d65fcc4acd147ade13c9b69681a1
https://doi.org/10.1134/s1063782619120121
https://doi.org/10.1134/s1063782619120121
Autor:
A. A. Toropov, M. V. Rakhlin, E. A. Evropeytsev, Aidar I. Galimov, K. G. Belyaev, G. V. Klimko
Publikováno v:
Acta Physica Polonica A. 136:613-616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f228a26a2ff666ab945a89282274f1e4
https://doi.org/10.12693/aphyspola.136.613
https://doi.org/10.12693/aphyspola.136.613
Autor:
A. P. Vasil’ev, A. G. Kuzmenkov, M. A. Bobrov, E. A. Evropeytsev, Yu. M. Zadiranov, A. M. Ospennikov, A. A. Blokhin, Sergey A. Blokhin, N. N. Ledentsov, L. Ya. Karachinsky, N. A. Maleev, V. M. Ustinov, A. V. Sakharov
Publikováno v:
Semiconductors. 52:93-99
The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d1c7c19c4a839e035134cbee982b67
https://doi.org/10.1134/s1063782618010062
https://doi.org/10.1134/s1063782618010062
Autor:
S I Troshkov, V. N. Jmerik, A. A. Usikova, A. N. Semenov, Stefan Ivanov, E. A. Evropeytsev, A. A. Toropov, Pavel N. Brunkov, V. Kh. Kaibyshev, Dmitrii V. Nechaev
Publikováno v:
Semiconductors. 52:622-624
AbstractWe report on fabrication and studies of composite heterostuctures consisting of an Al_0.55Ga_0.45N/A_l0.8Ga_0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0af6a3af6244349d988af7cffa8fbd0d
https://doi.org/10.1134/s1063782618050056
https://doi.org/10.1134/s1063782618050056
Autor:
V. N. Jmerik, Stefan Ivanov, A. A. Toropov, Dmitrii V. Nechaev, V. Kh. Kaibyshev, Galia Pozina, E. A. Evropeytsev, T. V. Shubina, S. Rouvimov, E. A. Shevchenko
Publikováno v:
Journal of Electronic Materials. 46:3888-3893
We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::969d484a679b00622f34fbe148fbdb27
https://doi.org/10.1007/s11664-016-5091-3
https://doi.org/10.1007/s11664-016-5091-3
Autor:
Irina V. Sedova, E. A. Evropeytsev, A. A. Toropov, G. V. Klimko, Galia Pozina, Stefan Ivanov, K. G. Belyaev, S. V. Sorokin, S. V. Gronin
Publikováno v:
physica status solidi c. 13:503-506
We report on the growth by molecular-beam epitaxy of short-period ZnSe/CdSe superlattices (SLs) on an In0.3Ga0.7As metamorphic buffer layer. Such SLs are considered as a promising material for a wide band-gap photoactive p-n junction in a hybrid mono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb09185e6222f1d5fd1b73ac2ee545b1
https://doi.org/10.1002/pssc.201510305
https://doi.org/10.1002/pssc.201510305
Autor:
Stefan Ivanov, Irina V. Sedova, N. D. Il'inskaya, S. V. Sorokin, G. V. Klimko, E. V. Kontrosh, V. S. Kalinovskii, S. V. Gronin, E. A. Evropeytsev, A. A. Usikova, A. A. Toropov
Publikováno v:
physica status solidi (b). 253:1503-1506
We present original design and performance simulations of four-junction heterovalent concentrator solar cells with monolithically integrated junctions based on Ge, III–V, and II–VI semiconductors. The developed design relies on the formation of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::851f7b5d80abe284ab0765651cd8b3eb
https://doi.org/10.1002/pssb.201600064
https://doi.org/10.1002/pssb.201600064
Publikováno v:
Journal of Crystal Growth. 425:212-215
Short-period ZnS y Se 1− y /CdSe superlattices (SLs) with an effective energy gap E g =2.5–2.6 eV ( T =300 K) are grown by molecular beam epitaxy pseudomorphically on GaAs (001), and their structural properties are studied by using X-ray diffract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58a357a555d74e0688ca8efaa4d7d0e5
https://doi.org/10.1016/j.jcrysgro.2015.02.007
https://doi.org/10.1016/j.jcrysgro.2015.02.007
Autor:
E. A. Evropeytsev, I. V. Sedova, Sergei Gronin, S. V. Sorokin, A. A. Toropov, Sergei Ivanov, G. V. Klimko
Publikováno v:
Semiconductors. 49:352-357
We present the results of theoretical modelling and experimental optical studies of the alternatively-strained CdSe/ZnSySe1 − y (y = 0.4) superlattice (SL) with effective band-gap Egeff ∼ 2.580 eV and a thickness of ∼300 nm, which was grown by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::686491b91931d16b8dd22d8674c950a4
https://doi.org/10.1134/s1063782615030070
https://doi.org/10.1134/s1063782615030070
Autor:
G. V. Klimko, I. V. Sedova, Sergei Gronin, S. V. Sorokin, E. A. Evropeytsev, Sergei Ivanov, D.R. Kazanov
Publikováno v:
Acta Physica Polonica A. 126:1096-1099
This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II VI heterostructures emitting in the true yellow range (560 600 nm) at room temperature. The active region of the structures comprises CdSe quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67a4f9ca4e14e3fc0226aab91a8886c2
https://doi.org/10.12693/aphyspola.126.1096
https://doi.org/10.12693/aphyspola.126.1096