Zobrazeno 1 - 10
of 35
pro vyhledávání: '"E. A. Chusovitin"'
Autor:
S. V. Chusovitina, E. Y. Subbotin, E. A. Chusovitin, D. L. Goroshko, S. A. Dotsenko, S. A. Pyachin, A. V. Gerasimenko, A. K. Gutakovskii
Publikováno v:
Japanese Journal of Applied Physics. 62:SD1005
The solid-state formation of gallium antimonide on Si(111) from a stoichiometric mixture of GaSb in the temperature range of 300 °C–500 °C and thicknesses of 12–40 nm was studied under ultrahigh vacuum conditions. The influence of the preformed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b716e235ef5b736f2ed3a555e777c7a2
https://doi.org/10.35848/1347-4065/aca4d8
https://doi.org/10.35848/1347-4065/aca4d8
Autor:
Andrey B. Filonov, E. A. Chusovitin, Vlodislav O. Bogorodz, D. L. Goroshko, Béla Pécz, Konstantin N. Galkin, Ildikó Cora, A. M. Maslov, Andrei V. Tupkalo, Sergey A. Dotsenko, Victor E. Borisenko, Nikolay G. Galkin, Evgenii Y. Subbotin, Dmitrii B. Migas
Publikováno v:
Journal of Alloys and Compounds. 770:710-720
The methods of heteroepitaxial growth of Si/CaSi2/Si(111) double heterostructures (DHS) at 500 °C have been developed. Thin CaSi2 layers with the thicknesses of 14–40 nm have been successfully embedded in the silicon matrix. The hR6-CaSi2(001)||Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfe414141aceb9ebf830b10eece8b45
https://doi.org/10.1016/j.jallcom.2018.08.179
https://doi.org/10.1016/j.jallcom.2018.08.179
Autor:
Konstantin N. Galkin, Z. Fogarassi, Béla Pécz, E. A. Chusovitin, D. L. Goroshko, Andrei V. Tupkalo, Nikolay G. Galkin
Publikováno v:
Japanese Journal of Applied Physics. 59:SFFA12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86975a4c8801f7d9c667493d68c2654d
https://doi.org/10.35848/1347-4065/ab6b75
https://doi.org/10.35848/1347-4065/ab6b75
Autor:
D. L. Goroshko, N. G. Galkin, E. A. Chusovitin, Svetlana Chusovitina, Konstantin N. Galkin, D.V. Fomin, Viktor L'vovich Dubov
Publikováno v:
Japanese Journal of Applied Physics. 59:SFFA11
The study of the optical properties of BaSi2 films grown on n-type silicon by solid-phase epitaxy showed that the band gap of BaSi2 is about 1.20 eV. Formed Al/BaSi2/Si mesa-diodes showed the presence of two maxima in the photoresponse spectra at 1.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbacfa3d3481d9cba4973539621e6665
https://doi.org/10.35848/1347-4065/ab6b76
https://doi.org/10.35848/1347-4065/ab6b76
Autor:
K. N. Galkin, D. L. Goroshko, E. A. Chusovitin, A. V. Shevlyagin, S. A. Balagan, A. K. Gutakovskii, T. S. Shamirzaev, N. G. Galkin, Y. Terai, S. A. Dotsenko, M. Iinuma
Publikováno v:
AIP Conference Proceedings.
Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and e-FeSi nanocrystals is formed on the surface,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61454eabb748cd577cafd051e2595771
https://doi.org/10.1063/1.4998036
https://doi.org/10.1063/1.4998036
Autor:
Konstantin N. Galkin, A. V. Shevlyagin, E. A. Chusovitin, Anton K. Gutakovskii, Nikolay G. Galkin, D. L. Goroshko
Publikováno v:
International Journal of Nanoscience. 18:1940084
The [Formula: see text]–[Formula: see text]–[Formula: see text] diode structures with a variable number of [Formula: see text]-FeSi2 and CrSi2 nanocrystal (NC) bilayer were studied at room and liquid nitrogen temperatures. The high crystal qualit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dbea854595878cfa8cad96e8a95ff91
https://doi.org/10.1142/s0219581x19400842
https://doi.org/10.1142/s0219581x19400842
Autor:
Mahesh Kumar, D. L. Goroshko, S. M. Shivaprasad, E. A. Chusovitin, N. G. Galkin, Konstantin N. Galkin
Publikováno v:
Physics Procedia. 23:29-32
The LEED patterns, electronic structure and morphology of Si(5 5 12) substrate surface were studied after different temperature cleaning procedures: high temperature (1250 oC), low temperature (900 oC) and cleaning at 800 oC in low silicon atom flow.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e91a3ee8e8f37f3f6d16ec8144ab9b62
Autor:
Nikolay G. Galkin, Tatyana A. Dergacheva, Valiantsin M. Astashynski, Konstantin N. Galkin, A. M. Kuzmitski, E. A. Chusovitin, Evgenii A. Kostyukevich
Publikováno v:
Physics Procedia. 11:39-42
A set of silicon substrates processed by compression plasma was studied by means of atomic force microscopy (AFM). AFM data revealed a threshold nature (in terms of plasma flow energy) of the formation of tube-like surface structures (SS) observed as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5304e4c19f6557dd86abdea2f9deb740
https://doi.org/10.1016/j.phpro.2011.01.009
https://doi.org/10.1016/j.phpro.2011.01.009
Autor:
R. M. Bayazitov, D. L. Goroshko, Konstantin N. Galkin, Peter I. Gaiduk, G. D. Ivlev, E. A. Chusovitin, N. G. Galkin, E. I. Gatskevich, V. F. Valeev, R. I. Batalov
Publikováno v:
Physics Procedia. 11:43-46
In this work buried nanocrystalline CrSi2 layers were synthesized by ion implantation, pulsed annealing and MBE. The structural, optical and thermoelectrical properties of CrSi2 layers were studied by methods of SEM, TEM, RBS, PL and Seebeck coeffici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09ef5d13e5191899b3448c825589e7e4
Autor:
E. A. Chusovitin, A. V. Barkar, P. P. Safronov, S. V. Vysotsky, V. G. Kuryavy, A. A. Karabtsov
Publikováno v:
Geology of Ore Deposits. 52:815-820
The results of the study of hydrothermal noble opal are discussed. it has been established that hydrothermal opal differs in its nanostructure and formation conditions from exogenic noble opal. The former is composed of smaller globules without any s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c49e43ac1fb5fc0e6e96fd5396de295
https://doi.org/10.1134/s1075701510080131
https://doi.org/10.1134/s1075701510080131