Zobrazeno 1 - 10
of 10
pro vyhledávání: '"E. A. Chernyavskaya"'
Autor:
E. V. Belikova, E. Yu. Chernyavskaya
Publikováno v:
Научный вестник Южного института менеджмента, Vol 0, Iss 2, Pp 94-101 (2019)
In article the author gives an assessment of a regional status and development of service activity and economy in the territory of Volgograd and area. The primary competitive benefits of the city are selected. The volume of paid services in the Russi
Externí odkaz:
https://doaj.org/article/ca15710a256d47ccae2f1b20e022f186
Publikováno v:
Научный вестник Южного института менеджмента, Vol 0, Iss 3, Pp 27-33 (2017)
In the article the authors consider the pricing process at different firms, where price strategies and discounts are used to attract potential buyers and maximize profits. The authors evaluate the most common types of pricing strategies and discounts
Externí odkaz:
https://doaj.org/article/599b8536d27a4c4294226038e6e94cd0
Autor:
N. N. Petrov, D. V. Gritsun, E. A. Dubrovskaya, N. A. Shkabara, E. A. Chernyavskaya, E. O. Ekotova, T. N. Musorina, N. N. Bukov
Publikováno v:
Russian Journal of Applied Chemistry. 95:70-75
Publikováno v:
Ukraïnsʹkij žurnal medicini, bìologìï ta sportu. 4:356-361
Publikováno v:
Proceedings of the Second Conference on Sustainable Development: Industrial Future of Territories (IFT 2021).
Autor:
E. A. Chernyavskaya, V. G. Babijchuk
Publikováno v:
Ukraïnsʹkij žurnal medicini, bìologìï ta sportu. 2:199-204
Autor:
E. S. Chernyavskaya, Z. M. Khamdokhov, E. Z. Khamdokhov, M. L. Shupegin, E. A. Il’ichev, G. S. Rychkov, O. A. Sakharov, E. P. Kirilenko, A. A. Shchekin, G. N. Petrukhin
Publikováno v:
Technical Physics. 59:1007-1011
A method is proposed to form graphene films using thermodiffusion of carbon atoms from an amorphous carbon or silicon-carbon film with a nanosized thickness through a catalyst film, their accumulation at the catalyst layer/barrier layer interface, an
Autor:
G. S. Rychkov, E. Z. Khamdokhov, M. L. Shupegin, E. S. Chernyavskaya, E. P. Kirilenko, A. A. Shchekin, G. N. Petrukhin, O. A. Sakharov, E. A. Il’ichev
Publikováno v:
Technical Physics Letters. 40:52-54
Graphene layers on device structures have been formed from amorphous carbon and silicon-carbon films using a sequence of technological procedures, including thermodiffusion of carbon atoms, their accumulation at the heteroboundary between layers with
Autor:
G. S. Rychkov, A. E. Kuleshov, E. A. Il’ichev, G. N. Petrukhin, O. A. Sakharov, R. M. Nabiev, E. S. Chernyavskaya
Publikováno v:
Technical Physics Letters. 39:808-810
The use of graphene as an electrode stimulating field emission in vacuum micro-and nanoelectronic devices is investigated. Such an application of graphene becomes possible due to its high conductivity, mechanical strength, and transparency to electro
Autor:
G. N. Abaev, E. V. Chernyavskaya
Publikováno v:
Journal of Engineering Physics and Thermophysics. 74:793-799
Consideration is given to the influence of different (geometric and hydromechanical) parameters on ejection; an equation describing the ejection is proposed; a maximum possible ejection coefficient is calculated from this equation, and an attempt is