Zobrazeno 1 - 10
of 44
pro vyhledávání: '"E Vlaikova"'
Autor:
E. Vlaikova, E. Halova, A. Szekeres, S. Alexandrova, Petre Osiceanu, A. Marin, M. Stoica, Mariuca Gartner, Mihai Anastasescu
Publikováno v:
Applied Surface Science. 258:7195-7201
By applying ellipsometry and extending the measurements from visible to mid infrared spectral range we examined the complex dielectric function of thin layers grown into silicon. The layers were synthesized by high-temperature (1050 °C) annealing in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b997b9beb91e2b2889d36ce85bd680c
https://doi.org/10.1016/j.apsusc.2012.04.033
https://doi.org/10.1016/j.apsusc.2012.04.033
Autor:
Peter Petrik, Zs. Fogarassy, Ágnes Cziráki, S. Grigorescu, Ion N. Mihailescu, Carmen Ristoscu, A. Szekeres, E. Vlaikova, Gabriel Socol
Publikováno v:
Applied Surface Science. 257:5370-5374
We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 × 10 8 W/cm 2 , repetition rate 3 Hz, 10 J/cm 2 laser fluence). The target–Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fec969cac418b3814dd7c0d523db9895
https://doi.org/10.1016/j.apsusc.2010.10.043
https://doi.org/10.1016/j.apsusc.2010.10.043
Autor:
P.E. Shepeliavyi, Igor Lisovskyy, A. Szekeres, Attila Tóth, S. Zlobin, E. Vlaikova, Tivadar Lohner
Publikováno v:
Solid State Phenomena. 159:149-152
Studies of oblique deposited nanostructured SiOx films by ellipsometric and IR spectroscopies are presented, as additional information is obtained by scanning electron microscopy (SEM). The films were deposited onto Si substrates under a 75° inciden
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a935f5027ae0797e22f2a01faea9eda
https://doi.org/10.4028/www.scientific.net/ssp.159.149
https://doi.org/10.4028/www.scientific.net/ssp.159.149
Autor:
P.E. Shepeliavyi, A. Szekeres, Ágnes Cziráki, E. Vlaikova, Tivadar Lohner, S. Zlobin, Peter Petrik
Publikováno v:
ECS Transactions. 25:379-384
Silicon oxide films, vacuum evaporated and annealed in Ar atmosphere at a temperature of 1000 and 1100ºC have been studied by multiple-angle spectroscopic ellipsometry (SE) in the spectral range of 280-820 nm. The thickness, complex refractive index
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a90aced0de2187b79c3d223fcfb5579
https://doi.org/10.1149/1.3204428
https://doi.org/10.1149/1.3204428
Autor:
G. Huhn, Tivadar Lohner, E. Vlaikova, I. Z. Indutnyy, A. Szekeres, Peter Petrik, P.E. Shepeliavyi, I. Lisovskyy, S. Zlobin, Károly Havancsák
Publikováno v:
Vacuum. 84:115-118
In this work we present results on the ellipsometric study of SiO x films in the spectral range of 280–820 nm. The films were deposited by vacuum thermal evaporation of SiO onto Si substrates heated at 150 °C. To stimulate the formation of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d879dee9b9e1b6e520aeb2f28cce6b
https://doi.org/10.1016/j.vacuum.2009.05.016
https://doi.org/10.1016/j.vacuum.2009.05.016
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 239:370-374
Effect of high energy electron irradiation on hydrogenated amorphous silicon (a-Si:H) has been studied. The electron beam with an energy of 18 MeV and fluence in the range of 1014–1015 cm−2 has been used. The degree of degradation and recovery of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0cc174f57135d8e51778195f2c15ed
https://doi.org/10.1016/j.nimb.2005.05.044
https://doi.org/10.1016/j.nimb.2005.05.044
Autor:
E. Vlaikova, Andrey Andreev, P. Danesh, B. Pantchev, B. S. Zafirova, E. Alipieva, E.I. Karakoleva
Publikováno v:
Sensors and Actuators B: Chemical. 106:484-488
A waveguide structure consisting of a side-polished single-mode polarization maintaining (PM) fiber and amorphous silicon film on top was applied for “in situ” control of the amorphous silicon deposition process. The changes in the fiber output i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db93b10410407392f21431d64185d07
https://doi.org/10.1016/j.snb.2004.09.002
https://doi.org/10.1016/j.snb.2004.09.002
Publikováno v:
Journal of physics : conference series
The lifetime of the excited charge carriers in Rh-doped BTO crystals is characterized by measuring the time-resolved photoinduced absorption (PIA) after nanosecond pulse excitation from a frequency doubled Nd:YAG laser (lambda = 532 nm). It was found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7925aa83a3f9be80f5c44ebc102a10f1
https://hdl.handle.net/10067/1447860151162165141
https://hdl.handle.net/10067/1447860151162165141
Publikováno v:
Journal of Non-Crystalline Solids. 242:110-114
The optical bandgap (Eg) and the complex index of refraction (N) in GexSb40−xSe60 glasses are studied by means of spectroscopic ellipsometry in the light wavelength region of 400 to 820 nm. The values of optical bandgap, Eg, and complex index of re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdf3cdce88e9e7d2ce7e671ead2299a
https://doi.org/10.1016/s0022-3093(98)00794-7
https://doi.org/10.1016/s0022-3093(98)00794-7
Chemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubes
Autor:
Dimitre Dimitrov, S. C. Yu, Vera Marinova, Marin Gospodinov, Peter M. Rafailov, E. Vlaikova, Gou Chung Chi, Peichen Yu, Shiuan-Huei Lin, Yi Chun Lai, V. Mehandjiev, P. Sveshtarov
Publikováno v:
Journal of Physics: Conference Series. 682:012009
Single-layer graphene films were grown by chemical vapour deposition (CVD) on Cu foil. The CVD process was complemented by plasma enhancement to grow also vertically aligned multiwalled carbon nanotubes using Ni nanoparticles as catalyst. The obtaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00aabe6590ea17f958f5c0a7d80f1a7a
https://doi.org/10.1088/1742-6596/682/1/012009
https://doi.org/10.1088/1742-6596/682/1/012009