Zobrazeno 1 - 7
of 7
pro vyhledávání: '"E V Rudnev"'
Autor:
E. P. Domashevskaya, Al Khailani Hasan Ismail Dambos, Stanislav V. Ryabtsev, M. V. Grechkina, E. V. Rudnev, Dmitry Goloshchapov
Publikováno v:
Semiconductors. 53:923-929
The impact of layer thickness on the morphology and optical properties of MoS2 nanostructures, including monomolecular layers, formed by the carrier-gas-assisted transport of sulfur vapor to the hot zone of a reactor containing metallic molybdenum an
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 640:072037
Water activity is a parameter that characterizes the hydration state of a particular substance and the extent of water binding therein. Many food system technology aspects are related to food system hydration, hence water activity (Aw) measurements c
Publikováno v:
Journal of Physics: Conference Series. 1347:012105
A method for forming thin films of the Cu2SnS3 compound homogeneous in phase composition for use in solar cell devices is proposed. The Cu-Sn alloy layers deposited by thermal spraying in vacuum were annealed in sulfur vapor in a graphite chamber of
Publikováno v:
Inorganic Materials. 45:1087-1091
Ga2Se3 and In2Se3 prepared through heterovalent substitution during thermal annealing of single-crystal gallium arsenide and indium arsenide substrates in selenium vapor in a quasi-closed system have been characterized by electron diffraction, scanni
Publikováno v:
Russian Physics Journal. 52:733-741
The kinetics of charge transfer by deep energy levels of the semiconductor gap, describing nonexponential shape of capacitance relaxation signals, is suggested. A method of analysis of these signals, possessing higher accuracy and resolution in compa
Publikováno v:
Journal of Physics: Conference Series; 2019, Vol. 1347 Issue 1, p1-1, 1p
Publikováno v:
Metallurgist. 31:139-141