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Impact of Oxygen Vacancies on the Formation and Structure of Filaments in SiO2-Based Memristors

Autor: E. V. Okulich, V. I. Okulich, David Tetelbaum

Publikováno v: Technical Physics Letters. 46:19-22

A improvement in the operational characteristics of a SiO2-based memristive device is achieved by irradiating its silicon dioxide layer with Xe+ ions, which creates collision cascades within this layer near the surface. The molecular dynamic modeling

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ffd4300729e898c753a53375fb10e653
https://doi.org/10.1134/s1063785020010083

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The Effect of Irradiation with Si+ Ions on Resistive Switching in Memristive Structures Based on Yttria-Stabilized Zirconia

Autor: David Tetelbaum, Alexey Belov, M. N. Koryazhkina, D. S. Korolev, E. V. Okulich, Yu. A. Dudin, M. E. Shenina, Alexey Mikhaylov, Ivan Antonov

Publikováno v: Technical Physics Letters. 45:690-693

We have studied the resistive switching in memristive structures based on 40-nm-thick yttria-stabilized zirconia (YSZ) films exposed to 6-keV Si+ ion irradiation to a total dose of 5.4 × 1015 cm–2. It is established that the ion irradiation leads

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40d2bf5a8e0f65c1124fdc741113bc71
https://doi.org/10.1134/s1063785019070253

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Ion implantation in β-Ga2O3: Physics and technology

Autor: David Tetelbaum, Raquel Giulian, Alexey Mikhaylov, A. V. Almaev, Dmitry Korolev, Pedro Luis Grande, E. V. Okulich, Mahesh Kumar, Ashok Kumar, Charles A. Bolzan, Alena Nikolskaya, Anton Stepanov, Dmitry Nikolichev, Antônio BuaczikJr., D. Gogova

Publikováno v: Journal of vacuum science & technology A: Vacuum, surfaces, and films. 2021. Vol. 39, № 3. P. 030802-1-030802-25
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties. The very high breakdown electric field and the figure of merit rival

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94c17a24bba61977e60ec46f5d3ac04a
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000896405

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Manipulation of resistive state of silicon oxide memristor by means of current limitation during electroforming

Autor: R.A. Shuisky, K. V. Sidorenko, David Tetelbaum, Ivan Antonov, D. S. Korolev, E.G. Gryaznov, V.I. Okulich, O. N. Gorshkov, Davud V. Guseinov, Alexey Mikhaylov, Alexey Belov, E. V. Okulich

Publikováno v: Superlattices and Microstructures. 122:371-376

Resistive switching and adaptive behavior of resistive state in response to electrical stimulation has been studied for the silicon oxide based memristive devices subjected to electroforming in the conditions of current compliance in comparison with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca5e511cb62155fe7ec673f52a574a90
https://doi.org/10.1016/j.spmi.2018.07.006

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Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions

Autor: V. I. Okulich, E. V. Okulich, David Tetelbaum

Publikováno v: Semiconductors. 52:1091-1096

Numerical calculations of the accumulation kinetics of point defects—vacancies and divacancies—under the irradiation of Si with ions having masses of M1 ≤ 31 amu and energies of E ≤ 100 keV under various irradiation conditions are performed.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ac775815aaa70244d67a3146cf1f9ab
https://doi.org/10.1134/s1063782618090105

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Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Autor: D. E. Nikolitchev, Davud V. Guseinov, D. A. Pavlov, David Tetelbaum, A. I. Belov, A. N. Mikhaylov, A. V. Pirogov, D. S. Korolev, Andrey A. Shemukhin, V. K. Vasiliev, A. V. Nezhdanov, E. V. Okulich, S. I. Surodin

Publikováno v: Semiconductors. 50:271-275

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonanc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2b295ea17c79332cf2e51eb8b848de3
https://doi.org/10.1134/s1063782616020135

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Effect of annealing on carrier transport properties of GaN-incorporated silicon

Autor: David Tetelbaum, Mahesh Kumar, Saravanan Rajamani, Alexey Belov, Alexey Mikhaylov, Dmitry Korolev, E. V. Okulich, D. E. Nikolitchev, S. I. Surodin

Publikováno v: RSC Advances. 6:74691-74695

GaN nanocrystals were formed in a silicon matrix by sequential implantation of Ga+ and N2+ ions followed by either Furnace Annealing (FA) or Rapid Thermal Annealing (RTA). The formation of Ga-rich clusters and Ga–N bonds was confirmed by X-ray phot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6e1ac5f8be55a0ebaed3376dee447b6
https://doi.org/10.1039/c6ra11261g

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The effect of irradiation with H+ and Ne+ ions on resistive switching in metal–insulator–metal memristive structures based on SiO x

Autor: A. P. Kasatkin, David Tetelbaum, A. P. Yatmanov, O. N. Gorshkov, Alexey Mikhaylov, V A Sergeev, E. V. Okulich, E.G. Gryaznov, D. S. Korolev, Alexey Belov, Ivan Antonov

Publikováno v: Technical Physics Letters. 41:957-960

The effect of irradiation with H+ and Ne+ ions with an energy of 150 keV on memristive Au/SiO x /TiN/Ti structures, which were obtained by magnetron sputtering and exhibited a reproducible resistive switching effect, is studied. It is demonstrated th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b6f68438552abcbca08469c95ede7f3
https://doi.org/10.1134/s106378501510003x

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Flexible Monte-Carlo approach to simulate electroforming and resistive switching in filamentary metal-oxide memristive devices

Autor: E. V. Okulich, Alexey Belov, D. S. Korolev, David Tetelbaum, V.I. Okulich, Davud V. Guseinov, Alexey Mikhaylov

Publikováno v: Modelling and Simulation in Materials Science and Engineering. 28:015007

An original approach has been presented to model the regularities and parameters of resistive switching based on the kinetic Monte Carlo (kMС) 3D simulation of stochastic migration of oxygen vacancies/ions in metal-oxide memristive devices promising

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fce00acb21c6dab7fc97376257801b14
https://doi.org/10.1088/1361-651x/ab580e

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Effect of ion irradiation on resistive switching in metal-oxide memristive nanostructures

Autor: David Tetelbaum, Alexey Belov, S. A. Gerasimova, Ivan Antonov, R. A. Shuiskiy, Alexey Mikhaylov, D. S. Korolev, E. V. Okulich

Publikováno v: Journal of Physics: Conference Series. 1410:012245

The development of artificial intelligence systems is needed to solve many important challenges in neurobiology and neuroengineering for recreation of brain functions and efficient biorobotics. Here we propose a metal-oxide memristive device compatib

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7901dd03be4069f115b6ad34870653f1
https://doi.org/10.1088/1742-6596/1410/1/012245

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