Zobrazeno 1 - 7
of 7
pro vyhledávání: '"E V Matveenko"'
Publikováno v:
Soviet Journal of Quantum Electronics. 9:823-827
Investigations were made of the spectral and power characteristics of electron-beam-excited epitaxial InAs lasers as a function of the carrier density, excitation rate, and temperature (80–220°K). The main laser action channels were interband and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::370bdb9b7c47c9ce15186477a872fff1
https://doi.org/10.1070/qe1979v009n07abeh009188
https://doi.org/10.1070/qe1979v009n07abeh009188
Publikováno v:
Soviet Journal of Quantum Electronics. 4:1446-1449
An investigation was made of the photoluminescence spectra and of the parameters of laser radiation generated by electron excitation of n- and p-type AlxGa1–xAs solid solutions with compositions in the range corresponding to the direct band structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f171d4e0d4595e7c5fdb5c56ef42295d
https://doi.org/10.1070/qe1975v004n12abeh012022
https://doi.org/10.1070/qe1975v004n12abeh012022
Autor:
E V Matveenko, E M Krasavina, M M Zverev, V K Yakushin, I V Kryukova, V A Ushakhin, N. N. Kostin, O V Bogdankevich, V F Pevtsov, S. P. Kopyt
Publikováno v:
Soviet Journal of Quantum Electronics. 15:1000-1002
A report is given of the fabrication of multielement uncooled lasers with an output power of 17 MW per pulse in the case of cadmium sulfide and 4.5 MW in the case of gallium arsenide pumped longitudinally by an electron beam. Ways of improving the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52a3225578faf5c162a5f6e0ab09783c
https://doi.org/10.1070/qe1985v015n07abeh007302
https://doi.org/10.1070/qe1985v015n07abeh007302
Autor:
E M Krasavina, V. P. Tsyganov, S. P. Prokofeva, I V Kryukova, E V Matveenko, L V Druzhinina, L M Dolginov, E G Shevchenko, Yu V Petrushenko
Publikováno v:
Soviet Journal of Quantum Electronics. 6:1367-1369
Epitaxial films of GaxIn1–xAs, GaAsxSb1–x, and GaxIn1–xAs1–yPy were excited with 50 keV electrons and the characteristics of photoluminescence and coherent radiation emitted from these films were determined at temperatures of 80 and 300°K. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba64e02f6a8afba1c3928f4160209c72
https://doi.org/10.1070/qe1976v006n11abeh012517
https://doi.org/10.1070/qe1976v006n11abeh012517
Autor:
I.V. Kryukova, V I Leskovich, E V Matveenko, V V Lebedev, V I Gurfinkel, N P Khatyrev, S S Strel'chenko, V A Chapnin, G B Lun'kina
Publikováno v:
Soviet Journal of Quantum Electronics. 6:868-870
An investigation was made of the cathodoluminescence of epitaxial films and bulk crystals of InAs with carrier densities in the range n = 5×1015–1018 cm–3 and p = 6×1016–1.5×1018 cm–3. Stimulated emission was obtained when epitaxial n-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1858ddcc3261efc98751e47734290be0
https://doi.org/10.1070/qe1976v006n07abeh011713
https://doi.org/10.1070/qe1976v006n07abeh011713
Autor:
A A Burov, I V Kryukova, V I Leskovich, E V Matveenko, Yu A Akimov, E A Zagarinskiĭ, B. M. Stepanov
Publikováno v:
Soviet Journal of Quantum Electronics. 10:368-369
Problems and ways of developing tunable electron-beam-pumped semiconductor lasers are discussed. The nature of the lasing transitions in semiconducting active elements made of GaxIn1–xAsySb1–y, grown by liquid-phase epitaxy is analyzed on the bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25327d6cf31d251e9c29306d8e84decc
https://doi.org/10.1070/qe1980v010n03abeh010010
https://doi.org/10.1070/qe1980v010n03abeh010010
Autor:
E V Matveenko, L M Dolginov, L V Druzhinina, I V Kryukova, V I Leskovich, A. N. Lapshin, M G Mil'vidskiĭ
Publikováno v:
Soviet Journal of Quantum Electronics. 8:66-67
The Gaxln1–xAsySb1–y solid-solution system was found to emit stimulated radiation in the wavelength range 1.86–2.2 μ (80°K) and 2.06–2.36 μ (300°K). A study was made of the principal characteristics of electron-beam-pumped lasers utilizin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c3f1db935a73ded576a99cd9f9447f0
https://doi.org/10.1070/qe1978v008n01abeh008401
https://doi.org/10.1070/qe1978v008n01abeh008401