Zobrazeno 1 - 10
of 76
pro vyhledávání: '"E V Chulkov"'
Publikováno v:
New Journal of Physics, Vol 18, Iss 11, p 113003 (2016)
We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized through the
Externí odkaz:
https://doaj.org/article/c45c530481224649811fe0e7fae5e253
Autor:
K Miyamoto, T Okuda, M Nurmamat, M Nakatake, H Namatame, M Taniguchi, E V Chulkov, K A Kokh, O E Tereshchenko, A Kimura
Publikováno v:
New Journal of Physics, Vol 16, Iss 6, p 065016 (2014)
We have clarified that a topological insulator, Bi _2 Te _2 Se, shows two surface states with gigantic Rashba-type spin-splitting located at a binding energy deeper than the topological surface state. The magnitude of the Rashba parameter, as well as
Externí odkaz:
https://doaj.org/article/81a7fd713afb43549ef0c7292817b336
Publikováno v:
New Journal of Physics, Vol 15, Iss 7, p 075015 (2013)
Within density functional theory, we study the bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases, which differ in atomic order in the Te–Br sublattice. On the basis of relativistic ab initio calculatio
Externí odkaz:
https://doaj.org/article/08918a7f97c7440ab96847f60f5576bd
Autor:
A M Shikin, A A Rybkina, M V Rusinova, I I Klimovskikh, A G Rybkin, E V Zhizhin, E V Chulkov, E E Krasovskii
Publikováno v:
New Journal of Physics, Vol 15, Iss 12, p 125014 (2013)
The spin structure of quantum well states (QWSs) in three-monolayer-thick gold overlayers on W(110) and Mo(110) is studied experimentally by spin- and angle-resolved photoelectron spectroscopy and theoretically by ab initio calculations. The spin–o
Externí odkaz:
https://doaj.org/article/9c587215123f415c8355b36cb27d1a20
Publikováno v:
New Journal of Physics, Vol 14, Iss 11, p 113030 (2012)
On the basis of relativistic ab initio calculations, we show that an expansion of van der Waal's (vdW) spacings in layered topological insulators caused by intercalation of deposited atoms, leads to the simultaneous emergence of parabolic and M-shape
Externí odkaz:
https://doaj.org/article/4ca992565399443a86a22917f5f0f276
Autor:
M. Garnica, M. M. Otrokov, P. Casado Aguilar, I. I. Klimovskikh, D. Estyunin, Z. S. Aliev, I. R. Amiraslanov, N. A. Abdullayev, V. N. Zverev, M. B. Babanly, N. T. Mamedov, A. M. Shikin, A. Arnau, A. L. Vázquez de Parga, E. V. Chulkov, R. Miranda
Publikováno v:
npj Quantum Materials, Vol 7, Iss 1, Pp 1-9 (2022)
Abstract We study the surface crystalline and electronic structures of the antiferromagnetic topological insulator MnBi2Te4 using scanning tunneling microscopy/spectroscopy (STM/S), micro(μ)-laser angle-resolved photoemission spectroscopy (ARPES), a
Externí odkaz:
https://doaj.org/article/fa089efe853e47c283254d15cf62dba8
Autor:
G. Benedek, M. Bernasconi, D. Campi, I. V. Silkin, I. P. Chernov, V. M. Silkin, E. V. Chulkov, P. M. Echenique, J. P. Toennies, G. Anemone, A. Al Taleb, R. Miranda, D. Farías
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract Closed-shell atoms scattered from a metal surface exchange energy and momentum with surface phonons mostly via the interposed surface valence electrons, i.e., via the creation of virtual electron-hole pairs. The latter can then decay into su
Externí odkaz:
https://doaj.org/article/009c1c5259b04af9a1e6f17956da07f6
Autor:
T. Hirahara, M. M. Otrokov, T. T. Sasaki, K. Sumida, Y. Tomohiro, S. Kusaka, Y. Okuyama, S. Ichinokura, M. Kobayashi, Y. Takeda, K. Amemiya, T. Shirasawa, S. Ideta, K. Miyamoto, K. Tanaka, S. Kuroda, T. Okuda, K. Hono, S. V. Eremeev, E. V. Chulkov
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Magnetic topological heterostructures are promising devices to manipulate emergent quantum effects. Here, Hirahara et al. fabricate a novel magnetic topological heterostructure with a massive Dirac cone which becomes a massless one tuned by temperatu
Externí odkaz:
https://doaj.org/article/3bb19ca61bd0426bbe0562b5fa20a83e
Autor:
M. Güttler, A. Generalov, S. I. Fujimori, K. Kummer, A. Chikina, S. Seiro, S. Danzenbächer, Yu. M. Koroteev, E. V. Chulkov, M. Radovic, M. Shi, N. C. Plumb, C. Laubschat, J. W. Allen, C. Krellner, C. Geibel, D. V. Vyalikh
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Heavy-fermion materials have unusual electronic behavior due to a dual localized-itinerant character of 4f electrons. Here, by studying divalent EuRh2Si2, the authors gain insight into the electronic states of the trivalent heavy fermion system YbRh2
Externí odkaz:
https://doaj.org/article/3b4f19237f3e47b098f80599653bf10d
Publikováno v:
JETP Letters. 117:228-233
Vanadium-containing heterostructures consisting of an ultrathin magnetic film on the surface of a nonmagnetic topological insulator have been studied theoretically. A method has been demonstrated to control the Dirac point shift in the k space, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ff096e38a5e79ccc59863e8c5afe530
https://doi.org/10.1134/s0021364022603293
https://doi.org/10.1134/s0021364022603293