Zobrazeno 1 - 10
of 47
pro vyhledávání: '"E V Chernikov"'
Autor:
N. K. Maksimova, B. O. Kushnarev, L. S. Khludkova, A. A. Biryukov, E. Yu. Sevast’yanov, E. V. Chernikov
Publikováno v:
Technical Physics. 66:999-1008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ffc73fcb57cadb2e8c3971f4bbf66c
https://doi.org/10.1134/s1063784221070094
https://doi.org/10.1134/s1063784221070094
Autor:
B. O. Kushnarev, V. I. Nikolaev, E. V. Chernikov, Nikita N. Yakovlev, Sergey Stepanov, A. I. Pechnikov, A. V. Almaev
Publikováno v:
IEEE Sensors Journal. 21:14636-14644
Electrical conductivity and gas sensitivity of $\alpha $ -Ga $_{2}\text{O}_{3}/\varepsilon $ ( $\kappa $ )-Ga2O3 structures were measured for oxygen concentrations ranging from 2 % to 100 % and temperatures ranging from 25 °C to 220 °C. It was foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac7d29e5ab3b2d25e8913ba11652b582
https://doi.org/10.1109/jsen.2021.3072664
https://doi.org/10.1109/jsen.2021.3072664
Autor:
A. V. Almaev, A. I. Pechnikov, Sergey Stepanov, V. I. Nikolaev, Nikita N. Yakovlev, B. O. Kushnarev, E. V. Chernikov
Publikováno v:
Semiconductors. 2021. Vol. 55, № 3. P. 346-353
The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b5f112692ebd19035807e50b4e6eb76
https://doi.org/10.1134/s1063782621030027
https://doi.org/10.1134/s1063782621030027
Publikováno v:
Technical Physics Letters. 46:1028-1031
Thin polycrystalline Cr2O3 films were obtained using RF magnetron sputtering followed by annealing in air at T = 673 K. The obtained films had grain diameters within 40–70 nm and a bandgap width of 3.3 ± 0.2 eV. In a temperature range of 303–473
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a48bf7b8cfe219f30c3cc0d69a3766
https://doi.org/10.1134/s106378502010017x
https://doi.org/10.1134/s106378502010017x
Publikováno v:
Technical Physics Letters. 46:480-483
The influence of operating modes on the response of ammonia sensors based on tin dioxide films has been studied. Samples have been obtained as a result of high-frequency magnetron sputtering of a SnO2:Sb target on sapphire substrates with predeposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0efe805439a8e567e19caf2dfcac96a
https://doi.org/10.1134/s1063785020050284
https://doi.org/10.1134/s1063785020050284
Publikováno v:
Russian Journal of Applied Chemistry. 93:427-436
Structural, electrical, and gas-sensitive characteristics of thin films (~100 nm) of tin dioxide containing Sb, Au, and Ni impurities in the bulk and dispersed Au clusters on the surface were studied. For the films prepared by magnetron sputtering, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bf3d38f09ac8f09e18905833956fb3a
https://doi.org/10.1134/s1070427220030155
https://doi.org/10.1134/s1070427220030155
Autor:
S. I. Golyshev, E. V. Chernikov, P. N. Sobolev, M. I. Prazdnichnykh, P. F. Yavorov, N. L. Padalko
Publikováno v:
Geology and mineral resources of Siberia. :81-86
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8b4557eb6935a1e557caff028c5af3a
https://doi.org/10.20403/2078-0575-2020-2-81-86
https://doi.org/10.20403/2078-0575-2020-2-81-86
Publikováno v:
Technical Physics Letters. 45:1016-1019
It is shown that NO2 present in air, beginning at a concentration of 1 ppm, can be selectively detected by sensors based on Au/WO3:Au thin films activated by laser diode radiation with maximum intensity at 400 nm instead of constant heating. The radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d68ead610412f70e83c757da58b4b933
https://doi.org/10.1134/s1063785019100171
https://doi.org/10.1134/s1063785019100171
Publikováno v:
Semiconductors. 53:452-457
The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d7880959f1f881793f9ad3c6a292ef
https://doi.org/10.1134/s1063782619040122
https://doi.org/10.1134/s1063782619040122
Autor:
A. V. Almaev, Anastasiya D. Lozinskaya, B. O. Kushnarev, Ekaterina V. Chuprakova, Nikita N. Yakovlev, D. Gogova, Vladimir L. Oleinik, Vadim V. Novikov, E. V. Chernikov
Publikováno v:
Journal of vacuum science & technology A. 2021. Vol. 39, № 2. P. 023405-1-023405-11
High-temperature β-Ga2O3:Cr2O3-based sensors sensitive to oxygen- and hydrogen-containing gases have been developed and studied. Magnetron cosputtering is the method of choice for the thin film synthesis as an industry-compatible technique. The comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c3dd8656aea1dc29bfb3b2ba288c71d
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000925389
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000925389
