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Autor:
G Dilecce
Publikováno v:
Journal of Physics D: Applied Physics. 50:211001
Publikováno v:
Plasma Sources Science and Technology. 27:055020
Autor:
Khan, Asir Intisar (AUTHOR), Ramdas, Akash (AUTHOR), Lindgren, Emily (AUTHOR), Kim, Hyun-Mi (AUTHOR), Won, Byoungjun (AUTHOR), Wu, Xiangjin (AUTHOR), Saraswat, Krishna (AUTHOR), Chen, Ching-Tzu (AUTHOR), Suzuki, Yuri (AUTHOR), da Jornada, Felipe H. (AUTHOR), Oh, Il-Kwon (AUTHOR) ikoh@ ajou.ac.kr, Pop, Eric (AUTHOR) epop@stanford.edu
Publikováno v:
Science. 1/3/2025, Vol. 387 Issue 6729, p62-67. 6p. 1 Color Photograph, 3 Diagrams.
Publikováno v:
Review of Scientific Instruments. 74:3385-3389
A technique used to obtain the evolution of the electrical resistivity of ultrathin films during growth in a plasma environment is described. Details are given on the physical construction of the substrate assembly that house specially prepared subst
Autor:
G. A. Hebner, E. V. Barnat
Publikováno v:
Applied Physics Letters. 85:3393-3395
Spatially resolved electric fields in the sheath region near a metal–dielectric junction were measured in a radio-frequency-driven argon plasma. The fields were determined by observing the Stark shifted transitions to the 13d[3∕2]1 Rydberg state
Autor:
E. V. Barnat, Toh-Ming Lu
Publikováno v:
Physical Review E. 66
A one-dimensional model is used to describe the evolution of charged particles in a plasma sheath driven by an asymmetrically pulsed dc bias in the frequency range of 100 kHz to 10 MHz. The temporal-spatial evolution of the sheath is obtained through
Publikováno v:
MRS Proceedings. 721
The electrical resistivities of copper films sputtered in either argon or an argon-hydrogen atmosphere are measured in real time, during growth. The electrical resistivities for both cases are observed to be functions of the film's thickness, with th
Autor:
Pei-I Wang, Krishna Rajan, G.-R. Yang, Toh-Ming Lu, Shyam P. Murarka, Y.-C. Chen, Xiang Li, E. V. Barnat
Publikováno v:
MRS Proceedings. 615
Cu-Al alloys have been recommended for application as the diffusion barriers/adhesion promoters for advanced copper based metallization schemes. This approach to barrier formation is to generate an ultra-thin interfacial layer through Cu alloying wit
Autor:
E. V. Barnat, G. A. Hebner
Publikováno v:
Journal of Applied Physics. 98:013305
Nonuniformities in both sheath electric field and plasma excitation were observed around dissimilar metals placed on a rf electrode. Spatial maps of the rf sheath electric field obtained by laser-induced fluorescence-dip (LIF-dip) spectroscopy show t