Zobrazeno 1 - 10
of 46
pro vyhledávání: '"E S Kolodeznyi"'
Autor:
A. V. Babichev, E. S. Kolodeznyi, A.G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, D. A. Mikhailov, D. V. Chistyakov, D. I. Kuritsyn, V. V. Dudelev, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, S. V. Morozov, G. S. Sokolovskii, N. A. Pikhtin, A. Yu. Egorov
Publikováno v:
Semiconductors. 56:1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f25edca47d7c4f8ab82dc89b72baff4b
https://doi.org/10.1134/s106378262201002x
https://doi.org/10.1134/s106378262201002x
Autor:
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov
Publikováno v:
Semiconductors. 55:591-594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de2eb138cf98cc29dc9b9455b75fea84
https://doi.org/10.1134/s106378262107006x
https://doi.org/10.1134/s106378262107006x
Autor:
S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. A. Blokhin, A. P. Vasil’ev, A. G. Kuz’menkov, E. S. Kolodeznyi, V. A. Shchukin, N. N. Ledentsov, S. Reitzenstein, V. M. Ustinov
Publikováno v:
Technical Physics Letters. 47:222-226
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9ab793f7edc9947031e534b1b9e696
https://doi.org/10.1134/s1063785021030056
https://doi.org/10.1134/s1063785021030056
Autor:
A. V. Babichev, N. V. Kryzhanovskaya, D. V. Denisov, A. G. Gladyshev, E. S. Kolodeznyi, Alexey M. Nadtochiy, A. Yu. Egorov, Innokenty I. Novikov, Anna S. Dragunova, L. Ya. Karachinsky, A. V. Uvarov, S. D. Komarov, V. V. Andryushkin
Publikováno v:
Optics and Spectroscopy. 129:256-260
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c457ee67df56bdcce7d7b8a967fff8f4
https://doi.org/10.1134/s0030400x21020089
https://doi.org/10.1134/s0030400x21020089
Autor:
Innokenty I. Novikov, V. N. Nevedomskii, E. S. Kolodeznyi, V. V. Andryushkin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, A. Yu. Egorov
Publikováno v:
Technical Physics. 65:2047-2050
A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. It is shown that the repl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::080dbb5b06153b8a585ca711a7a09eba
https://doi.org/10.1134/s1063784220120099
https://doi.org/10.1134/s1063784220120099
Autor:
V. P. Evtikhiev, M. I. Mitrofanov, D. I. Kuritsyn, E. S. Kolodeznyi, D. V. Denisov, G. V. Voznyuk, A. G. Gladyshev, A. V. Lyutetskii, Nikita A. Pikhtin, Anton Yu. Egorov, L. Ya. Karachinsky, A. V. Babichev, Sergey O. Slipchenko, Innokenty I. Novikov, S. V. Morozov
Publikováno v:
Semiconductors. 54:1816-1819
We have created a quantum-cascade laser with 7–8 μm wavelength and surface radiation output through a lattice formed by focused ion beam etching of the upper cladding of the waveguide. The active area of the quantum-cascade laser heterostructure w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac4dedfae79a45bf91e3eb1873bb8a5c
https://doi.org/10.1134/s106378262014002x
https://doi.org/10.1134/s106378262014002x
Autor:
L. Ya. Karachinsky, A. Yu. Egorov, V. N. Nevedomskii, A. V. Babichev, D. V. Denisov, Innokenty I. Novikov, E. S. Kolodeznyi, A. G. Gladyshev, Vladislav E. Bougrov, S. S. Rochas, V. V. Andryushkin
Publikováno v:
Technical Physics Letters. 46:1128-1131
We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2555f5f87bd7335314e5aec26860d30e
https://doi.org/10.1134/s1063785020110267
https://doi.org/10.1134/s1063785020110267
Autor:
L. Ya. Karachinsky, Innokenty I. Novikov, D. A. Firsov, D. V. Denisov, Nikita A. Pikhtin, A. Yu. Egorov, A. V. Lutetskiy, Vladislav V. Dudelev, L. E. Vorob’ev, E. S. Kolodeznyi, A. G. Gladyshev, A. S. Kurochkin, Grigorii S. Sokolovskii, D. A. Pashnev, Sergey O. Slipchenko, A. V. Babichev
Publikováno v:
Optics and Spectroscopy. 128:1187-1192
A cavity scheme based on a half-ring with different radii is proposed and fabricated for 7–8 μm quantum-cascade lasers. A quantum-cascade laser with a half-ring cavity radius of 191 μm demonstrated lasing with a spectral width of 474 nm (82 cm–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d150403584f7d34733ecd0868541a5bd
https://doi.org/10.1134/s0030400x20080068
https://doi.org/10.1134/s0030400x20080068
Autor:
N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, Yu. A. Guseva, A. P. Vasil’ev, S. A. Blokhin, M. A. Bobrov, S. I. Troshkov, V. V. Andryushkin, E. S. Kolodeznyi, V. E. Bougrov, V. M. Ustinov
Publikováno v:
Journal of Optical Technology. 89:677
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c720d4d8245855a58cc80b28c8da7957
https://doi.org/10.1364/jot.89.000677
https://doi.org/10.1364/jot.89.000677
Autor:
Innokenty I. Novikov, Nikita A. Pikhtin, D. V. Denisov, D. A. Firsov, E. S. Kolodeznyi, D. A. Pashnev, A. V. Babichev, Leonid E. Vorobjev, L. Ya. Karachinsky, Laurent Boulley, A. Yu. Egorov, Adel Bousseksou, A. G. Gladyshev, A. S. Kurochkin
Publikováno v:
Technical Physics Letters. 45:1136-1139
Spectral redistribution of the intensity of short- and long-wavelength emission components within gain bandwidth of a 7- to 8-μm quantum-cascade laser under the action of control voltage is demonstrated. As the voltage was increased from 10.5 to 18.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d96b7d3d0cdcd90f24b16214d9ff66bf
https://doi.org/10.1134/s106378501911018x
https://doi.org/10.1134/s106378501911018x