Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E P Kochura"'
Autor:
V S Zakhvalinskii, T B Nikulicheva, E A Pilyuk, E Lähderanta, M A Shakhov, O N Ivanov, E P Kochura, A V Kochura, B A Aronzon
Publikováno v:
Materials Research Express, Vol 7, Iss 1, p 015918 (2020)
Charge carriers parameters on a 2D-layer surface for (Cd _1−x−y Zn _x Mn _y ) _3 As _2 ( y = 0.08) (the concentration ${n}_{2D}$ = 1.9 × 10 ^12 cm ^–2 , the effective value of the 2D-layer ${d}_{2D}={n}_{2D}/{n}_{3D}$ = 14.5 nm, the wave vecto
Externí odkaz:
https://doaj.org/article/a5bff82191434a83b7d463315d81d09c
Autor:
L. S. Parshina, B. A. Aronzon, A. V. Kochura, E. I. Nekhaeva, A. I. Dmitriev, A. P. Kuz’menko, O. A. Novodvorskii, E. P. Kochura, Olga D. Khramova, A. L. Vasil’ev
Publikováno v:
Physics of the Solid State. 62:241-245
Magnetic properties of two-phase granular semiconductor–ferromagnet GaSb–MnSb films obtained by pulsed laser deposition as a function of growth temperature and postgrowth annealing were stu-died.
Autor:
B. A. Aronzon, Olga D. Khramova, O. A. Novodvorskii, A. P. Kuz’menko, A. I. Dmitriev, A. L. Vasil’ev, A. V. Kochura, L. S. Parshina, E. P. Kochura
Publikováno v:
Physics of the Solid State. 61:523-529
We observed a temperature-controlled increase in the magnetic anisotropy and its dispersion in thin GaMnSb films with MnSb nanoinclusions obtained by pulsed laser deposition. The data of transmission electron microscopy indicate that in the samples,
Autor:
A. L. Vasil’ev, A. I. Dmitriev, O. A. Novodvorskii, A. P. Kuz’menko, E. P. Kochura, Olga D. Khramova, A. V. Kochura, B. A. Aronzon, L. S. Parshina
Publikováno v:
Journal of Experimental and Theoretical Physics. 127:525-531
Conditions and mechanisms of controlled variation of the magnetic anisotropy of GaMnSb films containing magnetic MnSb nanoinclusions by means of heat treatment have been determined. For this purpose, the temperature and magnetic-field dependences of
Autor:
E. Lähderanta, T. B. Nikulicheva, V. S. Zakhvalinskii, A. V. Kochura, M. A. Shakhov, E. A. Pilyuk, O. N. Ivanov, E. P. Kochura, B. A. Aronzon
Publikováno v:
Materials Research Express. 7:015918
Charge carriers parameters on a 2D-layer surface for (Cd1−x−yZnxMny)3As2 (y = 0.08) (the concentration n 2 D = 1.9 × 1012 cm–2, the effective value of the 2D-layer d 2 D = n 2 D / n 3 D = 14.5 nm, the wave vector k F = 0.1 nm–1, the charge c