Zobrazeno 1 - 10
of 10
pro vyhledávání: '"E N Yitamben"'
Publikováno v:
New Journal of Physics, Vol 19, Iss 11, p 113023 (2017)
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leak
Externí odkaz:
https://doaj.org/article/f061a5e27d9c4513be0c2587247214b9
Autor:
E. N. Yitamben, Malcolm S. Carroll, Shashank Misra, Brian S. Swartzentruber, R. J. Simonson, R.E. Butera, Ezra Bussmann
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ae54cdcdd2f5c0014c62cf1186f0d8d
Publikováno v:
Physical Review B. 83
The growth and phase segregation properties of the potential dilute magnetic semiconductor alloy (MnSe)${}_{x}$(Ga${}_{2/3}$Se)${}_{1\ensuremath{-}x}$ are studied as a function of thickness, Mn concentration, postgrowth annealing, and the presence or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3972d20886fc84fe1af74b6edd8415
https://doi.org/10.1103/physrevb.83.155312
https://doi.org/10.1103/physrevb.83.155312
Autor:
Ezana Negusse, Marjorie A. Olmstead, Steve M. Heald, Tracy C. Lovejoy, E. N. Yitamben, A. B. Pakhomov, Fumio S. Ohuchi, Dario Arena
Publikováno v:
Physical Review B. 83
Chromium-doped gallium sesquiselenide, Cr:Ga${}_{2}$Se${}_{3}$, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morpholog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1769d377b030a4a65aac85897f5b8620
https://doi.org/10.1103/physrevb.83.045203
https://doi.org/10.1103/physrevb.83.045203
Autor:
E. N. Yitamben, Taisuke Ohta, S. C. Fain, Tracy C. Lovejoy, Marjorie A. Olmstead, Fumio S. Ohuchi
Publikováno v:
Physical Review B. 81
Gallium selenide Ga2Se3 is a III-VI chalcogenide material whose intrinsic cation vacancy ordering into one dimensional chains has been predicted to result in a one dimensional band at the valence-band maximum VBM. The electronic structure of Ga2Se3 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eddd4ef4db51ed1910ac2df298918f02
https://doi.org/10.1103/physrevb.81.245313
https://doi.org/10.1103/physrevb.81.245313
Autor:
Tracy C. Lovejoy, Fumio S. Ohuchi, Marjorie A. Olmstead, E. N. Yitamben, J. B. Callaghan, D. F. Paul
Publikováno v:
Physical Review B. 80
Addition of the transition-metal dopant Cr to ${\text{Ga}}_{2}{\text{Se}}_{3}$ during heteroepitaxial growth on Si(001), a system of interest as a prototype silicon-compatible, dilute magnetic semiconductor, has been studied with scanning-tunneling m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07d7f03309462f841a706676e45528f9
https://doi.org/10.1103/physrevb.80.075314
https://doi.org/10.1103/physrevb.80.075314
Publikováno v:
Nanotechnology. 26:235604
The present article investigates the adsorption and molecular orientation of L-Tryptophan, which is both an essential amino acid important for protein synthesis and of particular interest for the development of chiral molecular electronics and biocom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c823e9d09f059b50185b02fc05ebef5
https://doi.org/10.1088/0957-4484/26/23/235604
https://doi.org/10.1088/0957-4484/26/23/235604
Autor:
Fumio S. Ohuchi, E. N. Yitamben, E. G. Villora, S. Zheng, K. Shimamura, Renyu Chen, Tracy C. Lovejoy, V. Shutthanadan, Scott T. Dunham, Marjorie A. Olmstead, Steve M. Heald
Publikováno v:
Journal of Applied Physics. 111:123716
Single crystals of transition metal (TM) doped β–Ga2O3, a wide gap semiconductor system of interest for transparent conductive oxide and diluted magnetic semiconductor applications, have been studied in the dilute, non-interacting limit (≤0.06 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c5e2cf0ff7a73addefff76a3b3045b
https://doi.org/10.1063/1.4729289
https://doi.org/10.1063/1.4729289
Publikováno v:
Applied Physics Letters. 95:241907
Heteroepitaxial thin films of Mn-doped Ga2Se3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1–2 nm, after which oriented islands with flat tops are observed by scanning tunneling microscopy. In contrast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a42680460093019995032f6f552cca9
https://doi.org/10.1063/1.3273858
https://doi.org/10.1063/1.3273858
Autor:
Marjorie A. Olmstead, J. Morales, E. G. Villora, Tracy C. Lovejoy, N. Shamir, K. Shimamura, Fumio S. Ohuchi, S. Zheng, E. N. Yitamben
Publikováno v:
Applied Physics Letters. 94:081906
Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide (β-Ga2O3) have been conducted using scanning tunneling microscopy (STM), low-energy electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e28f8269f903c499bda056217417dd0
https://doi.org/10.1063/1.3086392
https://doi.org/10.1063/1.3086392