Zobrazeno 1 - 10
of 11
pro vyhledávání: '"E M Krasavina"'
Publikováno v:
Soviet Journal of Quantum Electronics. 5:1069-1074
An investigation was made of catastrophic degradation of electron-beam-pumped gallium arsenide lasers operating at temperatures of 80 and 300°K. The critical radiation density in the semiconductor resonator resulting in its damage ranged from 2 to 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffb6809e4e1196f5e79fb61cce977fd
https://doi.org/10.1070/qe1975v005n09abeh011900
https://doi.org/10.1070/qe1975v005n09abeh011900
Publikováno v:
Soviet Journal of Quantum Electronics. 4:1446-1449
An investigation was made of the photoluminescence spectra and of the parameters of laser radiation generated by electron excitation of n- and p-type AlxGa1–xAs solid solutions with compositions in the range corresponding to the direct band structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f171d4e0d4595e7c5fdb5c56ef42295d
https://doi.org/10.1070/qe1975v004n12abeh012022
https://doi.org/10.1070/qe1975v004n12abeh012022
Publikováno v:
Soviet Journal of Quantum Electronics. 16:1672-1674
An investigation was made of the causes of degradation of the active elements of sealed semiconductor GaAs lasers pumped transversely by electron beam pulses. Tests involving application of 5×106 pulses under the usual pumping conditions indicated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d80f1e319f9856aec095a6f392383c
https://doi.org/10.1070/qe1986v016n12abeh008532
https://doi.org/10.1070/qe1986v016n12abeh008532
Autor:
E V Matveenko, E M Krasavina, M M Zverev, V K Yakushin, I V Kryukova, V A Ushakhin, N. N. Kostin, O V Bogdankevich, V F Pevtsov, S. P. Kopyt
Publikováno v:
Soviet Journal of Quantum Electronics. 15:1000-1002
A report is given of the fabrication of multielement uncooled lasers with an output power of 17 MW per pulse in the case of cadmium sulfide and 4.5 MW in the case of gallium arsenide pumped longitudinally by an electron beam. Ways of improving the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52a3225578faf5c162a5f6e0ab09783c
https://doi.org/10.1070/qe1985v015n07abeh007302
https://doi.org/10.1070/qe1985v015n07abeh007302
Autor:
E M Krasavina, V. P. Tsyganov, S. P. Prokofeva, I V Kryukova, E V Matveenko, L V Druzhinina, L M Dolginov, E G Shevchenko, Yu V Petrushenko
Publikováno v:
Soviet Journal of Quantum Electronics. 6:1367-1369
Epitaxial films of GaxIn1–xAs, GaAsxSb1–x, and GaxIn1–xAs1–yPy were excited with 50 keV electrons and the characteristics of photoluminescence and coherent radiation emitted from these films were determined at temperatures of 80 and 300°K. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba64e02f6a8afba1c3928f4160209c72
https://doi.org/10.1070/qe1976v006n11abeh012517
https://doi.org/10.1070/qe1976v006n11abeh012517
Publikováno v:
Soviet Journal of Quantum Electronics. 5:577-579
An investigation was made of the parameters of the radiation emitted by electron-beam-excited lasers made of gallium arsenide single crystals prepared by different methods. A correlation was established between the radiative characteristics of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468a3ece435d06114a734c82aae65ba1
https://doi.org/10.1070/qe1975v005n05abeh011200
https://doi.org/10.1070/qe1975v005n05abeh011200
Publikováno v:
Soviet Journal of Quantum Electronics. 16:1408-1410
Brittle fracture, initiated by initial polishing defects and low-angle boundaries, occurred in semiconductor crystals under the action of a high-intensity pulsed electron beam. The damage threshold increased along the series of compounds CdS, ZnSe, Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6803bd73598c852171e0ced01a00036d
https://doi.org/10.1070/qe1986v016n10abeh008275
https://doi.org/10.1070/qe1986v016n10abeh008275
Autor:
L. G. Novozhilova, O V Bogdankevich, E M Krasavina, M M Zverev, V F Pevtsov, I V Kryukova, S. P. Kopyt
Publikováno v:
Soviet Journal of Quantum Electronics. 17:373-375
Pulse-periodic operation was attained in multicell semiconductor lasers made of ZnO, ZnSe, CdS, and GaAs crystals. At room temperature of the active element when the pulse repetition frequency was 50 Hz and the pulse duration was 8 nsec, the followin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab2aa639af266a4b4740a831f483d298
https://doi.org/10.1070/qe1987v017n03abeh007645
https://doi.org/10.1070/qe1987v017n03abeh007645
Autor:
V A Ushakhin, M M Zverev, I. V. Kryukova, V F Pevtsov, E. M. Krasavina, N. D. Vorobev, V K Yakushin, O V Bogdankevich, S. P. Kopyt
Publikováno v:
Soviet Journal of Quantum Electronics. 15:1002-1003
A pulsed multielement semiconductor laser with an unstable resonator was made of cadmium sulfide. Narrowing of the angular distribution of the output radiation to 30' for an output power of 200 kW was achieved.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3733935c85e15abfac4b989174cdf431
https://doi.org/10.1070/qe1985v015n07abeh007303
https://doi.org/10.1070/qe1985v015n07abeh007303
Autor:
E M Krasavina, I V Kryukova
Publikováno v:
Soviet Journal of Quantum Electronics. 9:656-657
An investigation was made of the degradation of electron-pumped gallium arsenide lasers operating at room temperature. One of the reasons for the degradation of these uncooled lasers was (in contrast to the cooled devices) an increase in the density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba3d6b5aba145dc8e67676b00ed66ef
https://doi.org/10.1070/qe1979v009n05abeh009088
https://doi.org/10.1070/qe1979v009n05abeh009088