Výsledky vyhledávání - "E M Arakcheeva"

Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

Autor: Mikhail V. Maximov, F. I. Zubov, Alexander Mintairov, Charis Mesaritakis, A. M. Nadtochy, A. V. Savel’ev, N. V. Kryzhanovskaya, E. M. Arakcheeva, Dimitrios Syvridis, Eduard Moiseev, A. E. Zhukov, D.A. Livshits, Andrey A. Lipovskii, Alexandros Kapsalis, M. M. Kulagina

Publikováno v: Semiconductors. 47:1387-1390

Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is ob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b702a4ff3a0d2d22a236c278bf645c00
https://doi.org/10.1134/s1063782613100187

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Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate

Autor: Yu. M. Zadiranov, K. A. Vashanova, D. A. Livshits, M. M. Kulagina, Mikhail V. Maximov, A. E. Zhukov, N. V. Kryzhanovskaya, E. M. Arakcheeva, Eduard Moiseev, Andrey A. Lipovskii, Ivan Mukhin, A. M. Nadtochiy

Publikováno v: Technical Physics Letters. 39:830-833

Microdisc resonators based on InAs/GaAs quantum dots separated from a GaAs substrate by selective etching and fixed to a silicon substrate by epoxy glue are studied using luminescence spectroscopy. A disc resonator 6 μm in diameter exhibits quasi-si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c508a9b2a9d9c2b35b883a032138a80f
https://doi.org/10.1134/s1063785013090216

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High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots

Autor: I. A. Slovinsky, N. V. Kryzhanovskaya, Mikhail V. Maximov, A. E. Zhukov, E. M. Arakcheeva, A. V. Savel'ev, A. M. Nadtochy, S. I. Troshkov, Andrey A. Lipovskii, Yu. M. Zadiranov, M. M. Kulagina

Publikováno v: Semiconductors. 46:1040-1043

Lasing at a wavelength of >1.3 μm has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 μm) with an active region based on InAs/InGaAs quantum dots.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dbb46cb28205bed8383d4fc4396b1821
https://doi.org/10.1134/s106378261208012x

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Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers

Autor: N. V. Kryzhanovskaya, A. V. Savelyev, A. E. Zhukov, Yu. M. Shernyakov, A. A. Krasivichev, Mikhail V. Maximov, F. I. Zubov, E. M. Arakcheeva

Publikováno v: Semiconductors. 46:225-230

An analytical expression is derived for the linewidth enhancement factor of a quantum-dot laser, which makes it possible to describe its dependence on optical loss and photon density in an explicit form. The model accounts for refractive index variat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92b331f3bc88023ce5ce7c05c1505a7d
https://doi.org/10.1134/s1063782612020273

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Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots

Autor: A. E. Zhukov, A. V. Savelyev, N. V. Kryzhanovskaya, E. M. Arakcheeva, N. Yu. Gordeev, F. I. Zubov, Mikhail V. Maximov

Publikováno v: Semiconductors. 45:966-970

Peak modulation frequency of lasers based on self-organized quantum dots is calculated taking into account the effect of nonlinear gain saturation. Because of a large nonlinear gain coefficient and a reduction in the differential gain with increasing

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::abfd4579bf663ea63349f54997ef9548
https://doi.org/10.1134/s1063782611070244

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A temperature-stable semiconductor laser based on coupled waveguides

Autor: A. V. Savelyev, V. A. Shchukin, E. M. Arakcheeva, Nikolai N. Ledentsov, Mikhail V. Maximov, N. Yu. Gordeev, A. S. Payusov, A. V. Chunareva, Innokenty I. Novikov

Publikováno v: Semiconductors. 45:550-556

The design of a stripe semiconductor laser with a composite waveguide formed of two tunneling-coupled waveguides, one of which is narrow and contains the active medium and the other of which is wide and forms the optical mode is considered. It is sho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbbd0f87ab44302477ae17323a9878c5
https://doi.org/10.1134/s1063782611040208

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Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates

Autor: M. M. Kulagina, I. P. Smirnova, E. M. Arakcheeva, L. K. Markov, D. A. Zakgeim, A. S. Pavluchenko

Publikováno v: Semiconductors. 44:657-660

A method for creating a light-scattering microprofile on the outer side of SiC substrates in order to diminish the light extraction loss caused by the effect of total internal reflection in light-emitting AlGaIn/GaN structures has been further develo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fba4517c3fc6bde69b5adaaf51567a3e
https://doi.org/10.1134/s1063782610050192

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Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs

Autor: I. P. Smirnova, A. S. Pavlyuchenko, E. M. Arakcheeva, L. K. Markov, M. M. Kulagina

Publikováno v: Semiconductors. 43:1521-1525

A reflecting contact to a p-GaN layer, used in fabrication of blue flip-chip light-emitting diodes, has been produced by deposition of thin indium tin oxide (ITO) films by electron-beam evaporation. The high reflectance of the contact, which exceeds

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8233550436b954420abe16dce49c3133
https://doi.org/10.1134/s1063782609110219

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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Autor: E. M. Arakcheeva, Peter Werner, I. P. Soshnikov, Vladimir G. Dubrovskii, Yu. B. Samsonenko, G. E. Cirlin, E. M. Tanklevskaya, A. D. Bouravleuv

Publikováno v: Nanoscale Research Letters, Vol 5, Iss 2, Pp 360-363 (2009)
Nanoscale Research Letters

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3ea0b43691207d4ca1ef2addbe4c766
https://doaj.org/article/9eb8ac143d204e1181e1b251979c494a

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Analysis of the local indium composition in ultrathin InGaN layers

Autor: A. V. Sakharov, A. F. Tsatsul’nikov, D. S. Sizov, E M Arakcheeva, S. O. Usov, N. A. Bert, E. E. Zavarin, N. N. Ledentsov, Yu. G. Musikhin, V. V. Lundin

Publikováno v: Semiconductor Science and Technology. 22:528-532

Experimental photoluminescence (PL) spectra and structural properties of the ultrathin InGaN insertions in an AlGaN matrix grown on a sapphire substrate were investigated. The PL emission mechanism was shown to be governed by the quantum dot (QD)-lik

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24e3a6ecaa0fff29a8b65dfe6d9ca53a
https://doi.org/10.1088/0268-1242/22/5/012

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