Zobrazeno 1 - 10
of 150
pro vyhledávání: '"E Kuphal"'
Publikováno v:
Materials Science and Engineering: B. 66:111-117
In order to increase the utilizable wafer area for DFB laser production, metalorganic vapor phase epitaxy (MOVPE) under N 2 as carrier gas has been applied for the first time to strain-compensated InGaAsP multi-quantum-well (MQW) structures on InP. V
Publikováno v:
Journal of Crystal Growth. 195:637-643
In order to improve the compositional homogeneity in metalorganic vapor phase epitaxy (MOVPE), growth under N 2 used as carrier gas has been applied for the first time to strain-compensated InGaAsP multi-quantum-well (MQW) structures on InP. Various
Autor:
P. Veit, Hans L. Hartnagel, A. Klein, P. Ressel, Geoffrey K. Reeves, E. Kuphal, Patrick W. Leech, E. Nebauer
Publikováno v:
Journal of Applied Physics. 84:861-869
The development of a shallow and low-resistive contact on moderately doped (p≈5×1018 cm−3) In0.53Ga0.47As is demonstrated. By reducing the layer thicknesses of a conventional Pd/Zn/Pd/Au scheme to a minimum and coupling this system to an outer A
Autor:
Herbert Burkhard, K. Schatke, E. Kuphal, Dieter Bimberg, B. Kempf, R. Gobel, B. Hubner, K. Dahlhof, S. Hansmann, Alois Krost
Publikováno v:
Journal of Lightwave Technology. 15:1191-1197
The characteristics of loss-coupled distributed feedback (DFB) semiconductor laser arrays are investigated both theoretically and experimentally. Using simulations based on a transfer matrix method, the strong influence of the residual facet reflecti
Autor:
Franz-Josef Tegude, Robert Magerle, Werner Prost, A. Lindner, A. Burchard, E. Kuphal, A. Wiersch, M. Deicher, P. Velling
Publikováno v:
Journal of Crystal Growth. 170:287-291
Hydrogen radicals are decisive for the low-temperature growth and carbon doping of In 0.53 Ga 0.47 As in LP-MOVPE. This is demonstrated for the growth of highly p-type doped In 0.53 Ga 0.47 As layers with CCl 4 as dopant source. Perturbed angular cor
Publikováno v:
Journal of Crystal Growth. 170:451-455
Technological problems, requirements, and solutions for a PIN-HBT photoreceiver are investigated. MOVPE growth of the different layer structures for PIN-diodes and SHBTs require compromises to obtain the best performances of the devices within the in
Autor:
F. Fiedler, B. Hubner, R. Ries, E. Kuphal, E. Ronneberg, R. Zengerle, C. Greus, G. Vollrath, B. Kempf, Herbert Burkhard, R. Gobel, H. Janning
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:1372-1383
We have realized laser diodes with integrated spot-size transformer to achieve a high-coupling efficiency to a standard single-mode fiber (SMF) without microoptical elements. A coupling loss of about 1 dB has been achieved with tolerances of 12 /spl
Autor:
Gregory Corder, Carl-Olav Stiller, Wenling Chen, Karen E. Kuphal, Kenneth E. McCarson, Michelle K. Winter, Weisi Fu, Bradley K. Taylor, Juan Carlos G. Marvizón, Janice H. Urban
Publikováno v:
Neuroscience. 256
Neuropeptide Y (NPY) is present in the superficial laminae of the dorsal horn and inhibits spinal nociceptive processing, but the mechanisms underlying its anti-hyperalgesic actions are unclear. We hypothesized that NPY acts at neuropeptide Y1 recept
Publikováno v:
Vacuum. 46:893-897
Wet chemical passivation of InP was performed in an acid solution that contained Ru ions in solution. Results showed a drastic increase in the Schottky barrier height of Ru contacts from 0.49 eV before passivation to about 0.88 eV after passivation a
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:341-345
We present an efficient method for an almost arbitrary variation of the complex coupling coefficient of distributed feedback lasers by using superstructure gratings, As shown by detailed transfer matrix model calculations the coupling coefficient can