Zobrazeno 1 - 10
of 691
pro vyhledávání: '"E Kuphal"'
Autor:
Ruser, Konrad
Publikováno v:
Vierteljahrschrift für Sozial- und Wirtschaftsgeschichte, 1964 Jan 01. 51(3), 397-399.
Externí odkaz:
https://www.jstor.org/stable/20729065
Publikováno v:
Angelicum, 1935 Oct 01. 12(4), 571-572.
Externí odkaz:
https://www.jstor.org/stable/44625553
Publikováno v:
Materials Science and Engineering: B. 66:111-117
In order to increase the utilizable wafer area for DFB laser production, metalorganic vapor phase epitaxy (MOVPE) under N 2 as carrier gas has been applied for the first time to strain-compensated InGaAsP multi-quantum-well (MQW) structures on InP. V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaf792478cc42d755f68c1cf37808bd3
https://doi.org/10.1016/s0921-5107(99)00124-5
https://doi.org/10.1016/s0921-5107(99)00124-5
Publikováno v:
Journal of Crystal Growth. 195:637-643
In order to improve the compositional homogeneity in metalorganic vapor phase epitaxy (MOVPE), growth under N 2 used as carrier gas has been applied for the first time to strain-compensated InGaAsP multi-quantum-well (MQW) structures on InP. Various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522dcf08273585755aeca040de81e62b
https://doi.org/10.1016/s0022-0248(98)00663-0
https://doi.org/10.1016/s0022-0248(98)00663-0
Autor:
P. Veit, Hans L. Hartnagel, A. Klein, P. Ressel, Geoffrey K. Reeves, E. Kuphal, Patrick W. Leech, E. Nebauer
Publikováno v:
Journal of Applied Physics. 84:861-869
The development of a shallow and low-resistive contact on moderately doped (p≈5×1018 cm−3) In0.53Ga0.47As is demonstrated. By reducing the layer thicknesses of a conventional Pd/Zn/Pd/Au scheme to a minimum and coupling this system to an outer A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::408b0cb04758dcd040e8cce825ed8fe3
https://doi.org/10.1063/1.368148
https://doi.org/10.1063/1.368148
Autor:
Herbert Burkhard, K. Schatke, E. Kuphal, Dieter Bimberg, B. Kempf, R. Gobel, B. Hubner, K. Dahlhof, S. Hansmann, Alois Krost
Publikováno v:
Journal of Lightwave Technology. 15:1191-1197
The characteristics of loss-coupled distributed feedback (DFB) semiconductor laser arrays are investigated both theoretically and experimentally. Using simulations based on a transfer matrix method, the strong influence of the residual facet reflecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2828d62346491a3c1a822aea3cc54069
https://doi.org/10.1109/50.596965
https://doi.org/10.1109/50.596965
Autor:
Franz-Josef Tegude, Robert Magerle, Werner Prost, A. Lindner, A. Burchard, E. Kuphal, A. Wiersch, M. Deicher, P. Velling
Publikováno v:
Journal of Crystal Growth. 170:287-291
Hydrogen radicals are decisive for the low-temperature growth and carbon doping of In 0.53 Ga 0.47 As in LP-MOVPE. This is demonstrated for the growth of highly p-type doped In 0.53 Ga 0.47 As layers with CCl 4 as dopant source. Perturbed angular cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ebc1522183ce363be911f824bd4366c
https://doi.org/10.1016/s0022-0248(96)00590-8
https://doi.org/10.1016/s0022-0248(96)00590-8
Publikováno v:
Journal of Crystal Growth. 170:451-455
Technological problems, requirements, and solutions for a PIN-HBT photoreceiver are investigated. MOVPE growth of the different layer structures for PIN-diodes and SHBTs require compromises to obtain the best performances of the devices within the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9424ab97a308f7829c8a08bda951f5e5
https://doi.org/10.1016/s0022-0248(96)00646-x
https://doi.org/10.1016/s0022-0248(96)00646-x
Autor:
F. Fiedler, B. Hubner, R. Ries, E. Kuphal, E. Ronneberg, R. Zengerle, C. Greus, G. Vollrath, B. Kempf, Herbert Burkhard, R. Gobel, H. Janning
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:1372-1383
We have realized laser diodes with integrated spot-size transformer to achieve a high-coupling efficiency to a standard single-mode fiber (SMF) without microoptical elements. A coupling loss of about 1 dB has been achieved with tolerances of 12 /spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9993037283973f9cf2ca97e0230eb913
https://doi.org/10.1109/2944.658791
https://doi.org/10.1109/2944.658791
Autor:
Gregory Corder, Carl-Olav Stiller, Wenling Chen, Karen E. Kuphal, Kenneth E. McCarson, Michelle K. Winter, Weisi Fu, Bradley K. Taylor, Juan Carlos G. Marvizón, Janice H. Urban
Publikováno v:
Neuroscience. 256
Neuropeptide Y (NPY) is present in the superficial laminae of the dorsal horn and inhibits spinal nociceptive processing, but the mechanisms underlying its anti-hyperalgesic actions are unclear. We hypothesized that NPY acts at neuropeptide Y1 recept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c1dbefc5b61d05cb00abf34c6fb156f
https://pubmed.ncbi.nlm.nih.gov/24184981
https://pubmed.ncbi.nlm.nih.gov/24184981