Zobrazeno 1 - 10
of 49
pro vyhledávání: '"E K, Chua"'
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Of all the advantages exhibited by the RRAM devices, e.g. low power consumption, fast switching speed, and especially the good scalability are particularly striking for high density memory application. However, 3D RRAM still suffer from poor enduranc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f491396c2c461168cc27f4f24d06b860
https://doi.org/10.1109/vlsi-tsa.2016.7480502
https://doi.org/10.1109/vlsi-tsa.2016.7480502
Publikováno v:
Japanese Journal of Applied Physics. 46:3922-3925
We have developed a new inorganic write-once optical disk for an optical recording system with a numerical aperture of 0.85 and a 405 nm blue-violet laser diode. The recording layer is composed of multi-layered structure of alternating Mg-based alloy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94619b872bc0f2f5030928d894ff04b7
https://doi.org/10.1143/jjap.46.3922
https://doi.org/10.1143/jjap.46.3922
Autor:
F. Ernult, E. K. Chua, E. G. Yeo, Kian Guan Lim, C. C. Yeap, Weijie Wang, M. H. Li, Leong Tat Law
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
GeTe phase change material doped with 12 to 22 atomic percent TiO 2 were deposited and characterized. The crystallization of amorphous doped GeTe is inhibited by the incorporation of TiO 2 dopant up to 22 % as depicted by the increasing activation en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9479171d9c7eb7c73c6e54e33d1d9ee6
https://doi.org/10.1109/edssc.2015.7285075
https://doi.org/10.1109/edssc.2015.7285075
Autor:
Minghua Li, Wendong Song, Kian Guan Lim, Hongxin Yang, Rong Ji, Wei He, Weijie Wang, Y. Jiang, Victor Yi-Qian Zhuo, Chun Chia Tan, Yi Yang, E. K. Chua
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (>107), but also exhibits the high on-current density (>1.6 MA/cm2) and large hysteresis window (1.2 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b32d4f652b2ed0017ba40fa8028be6
https://doi.org/10.1109/vlsit.2015.7223716
https://doi.org/10.1109/vlsit.2015.7223716
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In this work, tantalum oxide (TaOJ based ring contact Resistive Random Access Memory (RRAM) devices with varying TaO x thicknesses (5, 10 and 15 nm) were demonstrated and evaluated. TaO x layers were deposited using atomic layer deposition and were i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e8cffc176ea32435a9cc3be506720f5
https://doi.org/10.1109/edssc.2015.7285223
https://doi.org/10.1109/edssc.2015.7285223
Publikováno v:
Journal of Oral Pathology and Medicine. 33:305-310
Background: The expression of depression in Asian temporomandibular disorder (TMD) patients may differ from that of their Caucasian counterparts. This study examined the prevalence of depressive symptoms and their association with non-specific physic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40df99aeb792944077ad89f6570c6771
https://doi.org/10.1111/j.0904-2512.2004.00135.x
https://doi.org/10.1111/j.0904-2512.2004.00135.x
Autor:
M. H. Li, Weijie Wang, C. C. Yeap, E. K. Chua, Leong Tat Law, F. Ernult, Kian Guan Lim, E. G. Yeo
Publikováno v:
2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).
Varying ZrO 2 doped GeTe phase change material of atomic percent greater than 10% were deposited and characterized. It was discovered that the crystallization of amorphous doped GeTe is suppressed by the incorporation of ZrO 2 at lower concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b9ad2a7b1d8cebb65e313f79190c141
https://doi.org/10.1109/nvmts.2014.7060842
https://doi.org/10.1109/nvmts.2014.7060842
Publikováno v:
Dental Materials. 10:278-281
Objectives . This in vitro study was conducted to investigate the effect of dentin bonding agents on the microleakage of porcelain veneers cemented on dentin margins. Methods . Forty human premolars were prepared on both the buccal and palatal surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c2ccdda4de586c1bb84d595f1816bb6
https://doi.org/10.1016/0109-5641(94)90075-2
https://doi.org/10.1016/0109-5641(94)90075-2
Publikováno v:
The International journal of oralmaxillofacial implants. 26(4)
Conical implant-abutment connections for platform switching have been recently introduced in implant systems. This study investigated the load fatigue performance of three conical abutment systems and their corresponding titanium and zirconia abutmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5e639981c4f0f6b7fcc4ff7ebee93793
https://pubmed.ncbi.nlm.nih.gov/21841990
https://pubmed.ncbi.nlm.nih.gov/21841990
Autor:
Tow Chong Chong, Jeyanandh Paramesh, E. K. Chua, James A. Bain, Rong Zhao, Tuviah E. Schlesinger, Cheng-Yuan Wen, Larry Pileggi
Publikováno v:
2010 International Electron Devices Meeting.
This paper describes a new approach to the realization of reconfigurable CMOS-compatible RF inductors using programmable vias made from phase-change (PC) materials. Reversible reconfiguration of a custom-fabricated inductor prototype is demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8ed00dd8e6972dee19f587af4cd3e3f
https://doi.org/10.1109/iedm.2010.5703334
https://doi.org/10.1109/iedm.2010.5703334