Zobrazeno 1 - 10
of 20
pro vyhledávání: '"E J Thrush"'
Interband magneto-optical absorption has been studied on InGaAs/InGaAsP superlattice structures. In addition to the well known E1-HH1, E1-LH1, E2-HH2 confined state transitions, the observation of the strong transitions from the valence band continuu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb9608a43f58278d802505aa969ab1a6
https://doi.org/10.1088/0268-1242/7/4/009
https://doi.org/10.1088/0268-1242/7/4/009
Autor:
E J Thrush, A. D. Smith, Siu Ling Wong, Robin J. Nicholas, M. A. Gibbon, R.W. Martin, J.P. Stagg
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C5), pp.C5-327-C5-330. ⟨10.1051/jp4:1993567⟩
Scopus-Elsevier
Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C5), pp.C5-327-C5-330. ⟨10.1051/jp4:1993567⟩
Scopus-Elsevier
Magneto-absorption experiments on a range on In 1-x Ga x As y P 1-y /InGaAsP multi-quantum well (MQW) structures, including both tensile and compressive strained wells, are presented. Estimates for the band offsets are made in a lattice matched and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcd8993d34cf2af2efe61a692121af4c
https://ora.ox.ac.uk/objects/uuid:deb05918-e6fb-47b7-ad38-723a8358de40
https://ora.ox.ac.uk/objects/uuid:deb05918-e6fb-47b7-ad38-723a8358de40
Autor:
Harry K. Moffat, E. J. Thrush, John N. Shadid, Roger P. Pawlowski, Triantafillos J. Mountziaris, Constantinos Theodoropoulos, Andrew G. Salinger
Publikováno v:
Journal of Crystal Growth. 221:622-628
A fundamental reaction-transport model describing the metalorganic vapor-phase epitaxy (MOVPE) of GaN from trimethyl-gallium (TMG) and ammonia has been developed. This model has been tested against experimental data from research-scale and industrial
Autor:
D.M. Symons, Siu Ling Wong, E J Thrush, Robert W. Martin, M. A. Gibbon, J.P. Stagg, Robin J. Nicholas
Publikováno v:
Semiconductor Science and Technology. 11:735-740
Selective area epitaxy can have a marked effect on the growth of quantum well structures by metal-organic vapour phase epitaxy. An understanding of the resulting modifications to the layer thicknesses and compositions is important for the fabrication
Autor:
M. A. Gibbon, A. D. Smith, Robert W. Martin, Robin J. Nicholas, E J Thrush, Richard J. Warburton, Siu Ling Wong
Publikováno v:
Physical Review B. 50:7660-7667
Magneto-optical experiments have been used to study a range of InoaAsP-based multiple-quantumwell (MQW) structures containing biaxial strains, ranging from 1.6% tensile to 1.0% compressive. The observed excitonic transitions, involving both heavy and
Autor:
N Collis, R. E. Mallard, J.P. Stagg, A Chew, M. A. Gibbon, R E Pritchard, E J Thrush, C.J. Jones, C. G. Cureton
Publikováno v:
Semiconductor Science and Technology. 8:998-1010
Low-pressure MOCVD has been used to grow layers of InP, InGaAs, GaInAsP and quantum well material on planar substrates patterned with silica masks. The thicknesses and, where relevant, the compositions of these selectively grown layers were investiga
Publikováno v:
Semiconductor Science and Technology. 8:1173-1178
Various factors affecting the design of an optical modulator based on the quantum-confined Stark effect and suitable for integration with a 1.55 mu m InGaAs(P) laser are considered. Multiple quantum well (MQW) structures comprising various combinatio
Publikováno v:
Journal of Applied Physics. 73:4297-4304
The structural characterization by electron microscopy of a metalorganic chemical vapor deposition grown GaInAs/GaInAsP multiple‐quantum‐well structure undergoing a ‘‘blue shift’’ in luminescence wavelength upon thermal processing, as par
Autor:
E. J. Thrush, Triantafillos J. Mountziaris, Constantinos Theodoropoulos, Harry K. Moffat, J. Han, Roger P. Pawlowski
Publikováno v:
MRS Proceedings. 616
Metalorganic Vapor Phase Epitaxy (MOVPE) has emerged as the technique of choice for growing thin films and structures of group III-nitrides. The objective of this work is to address the optimal design of vertical rotating disk and stagnation flow MOV
Autor:
Robin J. Nicholas, J. Thompson, Siu Ling Wong, N. J. Long, B Hamilton, Andrew G. Norman, K Scarrott, Robert W. Martin, G.R. Booker, A Chew, D.E. Sykes, R. E. Mallard, J M Jowett, Klaus Satzke, R E Pritchard, S A Galloway, E J Thrush
Publikováno v:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 8(6)
The authors report on the structural and optical characterization of nominally lattice-matched GaInAs/GaInAsP multiple quantum well (MQW) structures grown on (100) InP substrates by metalorganic chemical vapour deposition (MOCVD) which undergo a 'blu