Zobrazeno 1 - 10
of 34
pro vyhledávání: '"E I Malysheva"'
Publikováno v:
Technical Physics Letters. 46:87-90
Low-temperature circularly polarized electroluminescence in InGaAs/GaAs/δ-〈Mn〉 heterostructures has been studied. It is established that the degree of circular polarization weakly depends on spatial separation of the active region and magnetic l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff1c855ed62edf3aac0851b458450bb3
https://doi.org/10.1134/s1063785020010204
https://doi.org/10.1134/s1063785020010204
Autor:
A. V. Zdoroveyshchev, M. V. Dorokhin, A. V. Kudrin, A. E. Parafin, M. V. Ved, Yu. A. Danilov, E. I. Malysheva
Publikováno v:
Physics of the Solid State. 60:2182-2187
—Spin light emitting diodes (spin-LEDs) containing (Ga,Mn)As ferromagnetic layers are fabricated based on InGaAs/GaAs heterostructures and studied. We achieve increases in the operating temperatures of our spin-LEDs by subjecting the surface of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97c118b5cf33a933df1a20cb7c77105
https://doi.org/10.1134/s1063783418110185
https://doi.org/10.1134/s1063783418110185
Autor:
M. V. Dorokhin, Yu. A. Danilov, A. V. Zdoroveyshchev, V. I. Zubkov, G. E. Yakovlev, A. V. Kudrin, E. I. Malysheva, A. L. Dudin, B. N. Zvonkov
Publikováno v:
Semiconductors. 52:1004-1011
GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration dept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb876266a9820f185d6ccb28b2f11d0
https://doi.org/10.1134/s1063782618080250
https://doi.org/10.1134/s1063782618080250
Autor:
A. V. Zdoroveyshchev, P. B. Demina, E. I. Malysheva, M. V. Ved, Yu. A. Danilov, A. V. Rykov, M. V. Dorokhin
Publikováno v:
Physics of the Solid State. 59:2162-2167
Circularly polarized luminescence of light-emitting InGaAs/GaAs structures with a delta-doped Mn layer in a GaAs barrier was studied. The structural parameters were varied by different ways, among them are homogeneous and delta-doping with acceptor i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e455b6292a9510b7531d417c8ff427a
https://doi.org/10.1134/s106378341711021x
https://doi.org/10.1134/s106378341711021x
Autor:
Sergey V. Zaitsev, A. V. Rykov, A. V. Kudrin, G. E. Yakovlev, A. V. Zdoroveyshchev, M. V. Dorokhin, V. I. Zubkov, D. S. Frolov, Yu. A. Danilov, E. I. Malysheva
Publikováno v:
Technical Physics. 62:1545-1550
Optical and transport properties of the heterostructure with the InAs/GaAs quantum dots doped with manganese or chromium atoms in the course of growth using metal-organic vapor phase epitaxy (MOVPE) are analyzed. Circularly polarized luminescence was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::473d35fdf9faa93cd49d0a703f00cef8
https://doi.org/10.1134/s1063784217100085
https://doi.org/10.1134/s1063784217100085
Publikováno v:
Technical Physics. 62:1398-1402
The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy have been studied. Surface topography photoluminescence spectra measurements have demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e6ca7abfd514784c34accac7115b255
https://doi.org/10.1134/s1063784217090055
https://doi.org/10.1134/s1063784217090055
Publikováno v:
Physics of the Solid State. 58:2271-2276
The spin light-emitting diodes based on InGaAs/GaAs heterostructures with a quantum well and an injector in the form of a (Ga,Mn)As ferromagnetic layer have been studied. It has been demonstrated that the efficiency of electron spin injection in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f02d1c1c617b11ba44919ef93816e26d
https://doi.org/10.1134/s1063783416110238
https://doi.org/10.1134/s1063783416110238
Autor:
E. I. Malysheva, A. V. Zdoroveishev, P. B. Demina, A. V. Rykov, O. V. Vikhrova, M. V. Dorokhin
Publikováno v:
Semiconductors. 50:1-7
The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the degree of electroluminescence circular polarization on the growth parameters, specifically, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8155a3b727bb35bea66c354502d4cf4e
https://doi.org/10.1134/s106378261601019x
https://doi.org/10.1134/s106378261601019x
Publikováno v:
Semiconductors. 49:1448-1452
The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/n-GaAs/n +-GaAs/GaMnAs and InGaAs/n-GaAs/n +-GaAs/GaMnSb is carried out. It is established that the circularly polarized electroluminescence is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3585a48ae6cd667e6a776c84ec9c6fc7
https://doi.org/10.1134/s1063782615110147
https://doi.org/10.1134/s1063782615110147
Autor:
A. V. Zdoroveyshchev, A. I. Bobrov, M. V. Dorokhin, Yu. A. Danilov, N. V. Malekhonova, S. Saeid, D. A. Pavlov, E. I. Malysheva
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:706-709
Spin injection light-emitting diodes based on heterostructures with InGaAs/GaAs quantum wells and a ferromagnetic metal (Co) contact layer are fabricated and studied. The effect of the penetration of cobalt in GaAs is experimentally detected. It is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e82e5ef20b26645fef0baa0b1138ee6
https://doi.org/10.1134/s1027451015040059
https://doi.org/10.1134/s1027451015040059