Zobrazeno 1 - 10
of 508
pro vyhledávání: '"E Faria"'
Autor:
Rosa, Bárbara L. T., Junior, Paulo E. Faria, Cadore, Alisson R., Yang, Yuhui, Koulas-Simos, Aris, Palekar, Chirag C., Tongay, Sefaattin, Fabian, Jaroslav, Reitzenstein, Stephan
The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrica
Externí odkaz:
http://arxiv.org/abs/2407.08063
Autor:
Campos, Warlley H., Penteado, Poliana H., Zanon, Julian, Junior, Paulo E. Faria, Candido, Denis R., Egues, J. Carlos
Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the $\mathbf{k}\cdot\mathb
Externí odkaz:
http://arxiv.org/abs/2405.15869
Rashba spin-orbit coupling is a quintessential spin interaction appearing in virtually any electronic heterostructure. Its paradigmatic spin texture in the momentum space forms a tangential vector field. Using first-principles investigations, we demo
Externí odkaz:
http://arxiv.org/abs/2402.12353
Autor:
Palekar, Chirag C., Junior, Paulo E. Faria, Rosa, Barbara, Sousa, Frederico B., Malard, Leandro M., Fabian, Jaroslav, Reitzenstein, Stephan
Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of int
Externí odkaz:
http://arxiv.org/abs/2311.02509
Autor:
de Brito, C. Serati, Junior, P. E. Faria, Ghiasi, T. S., Ingla-Aynés, J., Rabahi, C. R., Cavalini, C., Dirnberger, F., Mañas-Valero, S., Watanabe, K., Taniguchi, T., Zollner, K., Fabian, J., Schüller, C., van der Zant, H. S. J., Gobato, Y. Galvão
Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs. Here, we repor
Externí odkaz:
http://arxiv.org/abs/2309.03766
Autor:
Rybak, Miłosz, Junior, Paulo E. Faria, Woźniak, Tomasz, Scharoch, Paweł, Fabian, Jaroslav, Birowska, Magdalena
Here we systematically investigate the impact of the spin direction on the electronic and optical properties of transition metal phosphorus trichalcogenides (MPX$_3$, M=Mn, Ni, Fe; X=S, Se) exhibiting various antiferromagnetic arrangement within the
Externí odkaz:
http://arxiv.org/abs/2308.13109
Autor:
Swarup Deb, Johannes Krause, Paulo E. Faria Junior, Michael Andreas Kempf, Rico Schwartz, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Tobias Korn
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-genera
Externí odkaz:
https://doaj.org/article/5b0516efbe3c4f6ebd8cf460a84ce047
Autor:
Chirag Chandrakant Palekar, Paulo E. Faria Junior, Barbara Rosa, Frederico B. Sousa, Leandro M. Malard, Jaroslav Fabian, Stephan Reitzenstein
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-8 (2024)
Abstract Van der Waals heterostructures based on transition metal dichalcogenides exhibit physical properties that depend on their monolayer constituents’ twisting angle and stacking order. Particularly in type-II heterostructures, low-energy photo
Externí odkaz:
https://doaj.org/article/f04337e4631d455986912cb7c0efcd2a
Autor:
Graml, Maximilian, Zollner, Klaus, Hernangómez-Pérez, Daniel, Junior, Paulo E. Faria, Wilhelm, Jan
The $GW$ method is widely used for calculating the electronic band structure of materials. The high computational cost of $GW$ algorithms prohibits their application to many systems of interest. We present a periodic, low-scaling and highly efficient
Externí odkaz:
http://arxiv.org/abs/2306.16066