Zobrazeno 1 - 10
of 129
pro vyhledávání: '"E E Zavarin"'
Autor:
A. A. Ivanov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
Publikováno v:
Semiconductors. 55:S49-S53
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f9f067b22bc5b111515eeaaa1b218a
https://doi.org/10.1134/s1063782621090074
https://doi.org/10.1134/s1063782621090074
Autor:
W. V. Lundin, Pavel N. Brunkov, E. E. Zavarin, S. O. Usov, A. V. Sakharov, A. F. Tsatsul’nikov
Publikováno v:
Technical Physics Letters. 46:1211-1214
We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures, including ones above the atmospheric level. It is established that the epitaxial growth at higher pressures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb06c08ab4b2dd20b7256500d35c9726
https://doi.org/10.1134/s1063785020120263
https://doi.org/10.1134/s1063785020120263
Autor:
E. E. Zavarin, W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, D. A. Zakheim, D. S. Arteev
Publikováno v:
Semiconductors. 53:1900-1903
The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation sublattice was analyzed theoretically. The calculated values of the full width at half maximum of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e5731a73c3c1d2863d378ce47cc0bd
https://doi.org/10.1134/s1063782619140033
https://doi.org/10.1134/s1063782619140033
Autor:
W. V. Lundin, E. Yu. Lundina, A. V. Sakharov, A. F. Tsatsul’nikov, Pavel N. Brunkov, D. A. Zakgeim, E. E. Zavarin
Publikováno v:
Technical Physics Letters. 45:723-726
The morphology and electrical properties of doped semi-insulating gallium nitride (GaN) epilayers have been studied. It was found that doping-induced improvement of the insulating properties of GaN epilayers with increased level of doping with carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::139afc93d40c36ebaee1adf6c11409bc
https://doi.org/10.1134/s106378501907023x
https://doi.org/10.1134/s106378501907023x
Autor:
A. A. Ivanov, V. V. Chaldyshev, V. I. Ushanov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
Publikováno v:
Applied Physics Letters. 121:041101
We study a disorder-induced transformation of the resonant optical reflection from a nearly periodic system of quasi-2D excitons in the InGaN quantum wells arranged as a resonant Bragg structure (RBS). We show that there is a critical deviation from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::034520efb05d49a5ab2588ea5de16034
https://doi.org/10.1063/5.0095417
https://doi.org/10.1063/5.0095417
Autor:
I. A. Eliseyev, Alexander N. Smirnov, W. V. Lundin, V. Yu. Davydov, L.K. Markov, M. A. Yagovkina, A. F. Tsatsul’nikov, E.Yu. Lundina, E. E. Zavarin, D. A. Zakheim, Pavel N. Brunkov, A. V. Sakharov
Publikováno v:
Journal of Crystal Growth. 504:1-6
We investigated the growth of III-N/graphene heterostructures as a single process in a MOVPE reactor. Raman spectra revealed that graphene can be successfully deposited on sapphire substrate by propane pyrolysis if temperature exceeds 1060 °C and hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad3fa2e4b2fc2b52504d26f83f4dc55e
https://doi.org/10.1016/j.jcrysgro.2018.09.017
https://doi.org/10.1016/j.jcrysgro.2018.09.017
Autor:
V. V. Lundin, Andrey E. Nikolaev, M. A. Yagovkina, D. A. Zakgeim, E. E. Zavarin, Pavel N. Brunkov, A. V. Sakharov, A. F. Tsatsul’nikov
Publikováno v:
Technical Physics Letters. 44:577-580
AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raisi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::912f39c452041976cc00fad71194e0a1
https://doi.org/10.1134/s1063785018070106
https://doi.org/10.1134/s1063785018070106
Publikováno v:
Journal of Physics: Conference Series. 2086:012075
The paper presents the derivation of a model for minority carriers collection based on the reciprocity theorem and its application for determination of hole diffusion length in n-GaN by means of photoluminescence. The estimated hole diffusion lengths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c75449ef03d3c9786a61e92559f17d
https://doi.org/10.1088/1742-6596/2086/1/012075
https://doi.org/10.1088/1742-6596/2086/1/012075
Autor:
Yu V Davydov, E M Roginskii, Yu E Kitaev, A N Smirnov, I A Eliseyev, S N Rodin, E E Zavarin, W V Lundin, D V Nechaev, V N Jmerik, M B Smirnov
Publikováno v:
Journal of Physics: Conference Series. 2103:012147
The results of joint theoretical and experimental studies aimed at revealing features in the Raman spectra, which can be used for evaluation of the interface quality between GaN and AlN layers in short-period GaN/AlN superlattices (SLs) are presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aa343f0f12898e67c1e85a30d8dd850
https://doi.org/10.1088/1742-6596/2103/1/012147
https://doi.org/10.1088/1742-6596/2103/1/012147
Publikováno v:
Journal of Physics: Conference Series. 2103:012202
The influence of two types of AlN/GaN interfacial non-idealities, namely unintentional Ga incorporation into AlN spacer and blurring of the spacer due to Al and/or Ga atomic diffusion on the mobility and density of two-dimensional electron gas in AlG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bec6dc4ab7c78820d41e6b397097fa03
https://doi.org/10.1088/1742-6596/2103/1/012202
https://doi.org/10.1088/1742-6596/2103/1/012202