Zobrazeno 1 - 10
of 21
pro vyhledávání: '"E A. Rezek"'
Publikováno v:
Journal of Applied Physics. 50:5835-5840
Stripe‐geometry multiple quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes are described that exhibit tunnel injection with LO phonon participation in the injection and the recombination process. The diodes are constructed by Zn diffu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f1ca4fe0892c498ad4b22314f1791f
https://doi.org/10.1063/1.326730
https://doi.org/10.1063/1.326730
Publikováno v:
Journal of Crystal Growth. 41:254-261
The growth of lattice-matched In 1- x Ga x P 1- z As z -InP heterojunctions by constant-temperature liquid phase epitaxy has been examined. The LPE heterojunction growth is carried out at 640°C employing In-rich melts saturated at 650°C. The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69632b2d44fff604d06e9e1b25b4864b
https://doi.org/10.1016/0022-0248(77)90053-7
https://doi.org/10.1016/0022-0248(77)90053-7
Publikováno v:
Journal of Electronic Materials. 10:255-285
Data are presented showing that two different mechanisms control the LPE growth of InGaPAs in the step-cooled technique. An automated growth apparatus, which allows an accurate and reproducible selection of growth times as short as ~9ms, is used to s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3491c5c96b705d9faa68cf5d6dcc2fa3
https://doi.org/10.1007/bf02654912
https://doi.org/10.1007/bf02654912
Publikováno v:
IEEE Journal of Quantum Electronics. 17:161-166
A modified version of the standard step cooled LPE growth process is described for the growth of visible-spectrum In 1-x Ga x P 1-z As z double-heterostructure (DH) lasers on GaAs 1-y P y ( y \sim 0.30 ). The quality of the quaternary epitaxial layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79a8f80e615ec185b29ef4a8f23dfb83
https://doi.org/10.1109/jqe.1981.1071064
https://doi.org/10.1109/jqe.1981.1071064
Publikováno v:
Journal of Applied Physics. 49:69-74
Liquid‐phase epitaxial (LPE) single and multiple thin quaternary layer In1−xGaxP1−zAsz laser diodes (x∼0.13, z∼0.28; λ∼1.1 μm, 77 °K) that exhibit quantum size effects (QSE) are described. LPE quaternary active layers approaching Lz∼
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f5d07b7b5265a491db96297bc8a60f5
https://doi.org/10.1063/1.324370
https://doi.org/10.1063/1.324370
Publikováno v:
Journal of Applied Physics. 48:4287-4291
Tunnel diode I‐V, dI/dV, and d2I/dV2 characteristics are used to examine defect effects and phonon energies in In1−xGaxP1−zAsz double‐heterojunction lasers (λ‐1.1 μm) grown by liquid‐phase epitaxy on InP substrates. Similar to the usual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc8433bce38722690b571cbdcd575b2
https://doi.org/10.1063/1.323416
https://doi.org/10.1063/1.323416
Publikováno v:
Journal of Applied Physics. 49:5398-5403
The bandfilling and gain behavior of thin (Lz∼400 A) In1−xGaxP1−zAsz (x∼0.13, z∼0.29) layers imbedded in InP p‐n junctions, or on one side of the active region of regular quaternary double heterojunctions (x∼0.09, z∼0.20), are describ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e794d190d3d0945847121e64244945c4
https://doi.org/10.1063/1.324495
https://doi.org/10.1063/1.324495
Publikováno v:
Journal of Applied Physics. 49:5392-5397
Data are presented showing that quantum‐well (Lz∼200 A) AlxGa1−xAs‐GaAs‐AlxGa1−xAs heterostructures, grown by metalorganic chemical vapor deposition, can be operated as lasers on confined‐particle transitions over an unusually large ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b52a76177d6e40b0ce8d6c631d1933
https://doi.org/10.1063/1.324494
https://doi.org/10.1063/1.324494
Publikováno v:
Applied Physics Letters. 35:45-47
By means of computer‐controlled liquid‐phase epitaxy, multiple‐quantum‐well InP‐In1−xGaxP1−zAsz (x∼0.13, z∼0.29) heterostructures of uniform well (Lz∼160 A) and coupling barrier size are grown and are examined in photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ae55bc66288ab3ee2f1442842189a9
https://doi.org/10.1063/1.90924
https://doi.org/10.1063/1.90924
Autor:
J. D. Fairing, Bruce A. Vojak, G. E. Stillman, D. L. Keune, J. A. Rossi, E. A. Rezek, Nick Holonyak
Publikováno v:
Applied Physics Letters. 31:288-290
A liquid‐phase‐epitaxial (LPE) double‐heterojunction (DH) laser structure with an ∼1‐μm ’’active region’’ consisting of ≳20 In1−xGaxP1−zAsz and InP lattice‐matched thin layers is described. The thin‐layer dimensions are s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4de76a574b5e8131fc6dd65518795de
https://doi.org/10.1063/1.89665
https://doi.org/10.1063/1.89665