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Akademický článek

O ESTADO DIGITAL DE TUVALU: A fusão do mundo físico e virtual é capaz de manter a existência de um Estado diante das mudanças climáticas?

Autor: Alves Ruenreang, Victória^1,2 victoria.alves@sempreceub.com

Publikováno v: Revista Brasileira de Direito Internacional. jan-jun2024, Vol. 10 Issue 1, p1-18. 18p.

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Tunnel injection and phonon‐assisted recombination in multiple quantum‐well AlxGa1−xAs‐GaAsp‐nheterostructure lasers grown by metalorganic chemical vapor deposition

Autor: Russell D. Dupuis, E. A. Rezek, P.D. Dapkus, R. Chin, Bruce A. Vojak, Nick Holonyak

Publikováno v: Journal of Applied Physics. 50:5835-5840

Stripe‐geometry multiple quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes are described that exhibit tunnel injection with LO phonon participation in the injection and the recombination process. The diodes are constructed by Zn diffu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4f1ca4fe0892c498ad4b22314f1791f
https://doi.org/10.1063/1.326730

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Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions

Autor: Nick Holonyak, P. D. Wright, E. A. Rezek

Publikováno v: Journal of Crystal Growth. 41:254-261

The growth of lattice-matched In 1- x Ga x P 1- z As z -InP heterojunctions by constant-temperature liquid phase epitaxy has been examined. The LPE heterojunction growth is carried out at 640°C employing In-rich melts saturated at 650°C. The effect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69632b2d44fff604d06e9e1b25b4864b
https://doi.org/10.1016/0022-0248(77)90053-7

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Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth

Autor: R. Chin, B. A. Vojak, E. A. Sammann, Nick Holonyak, E. A. Rezek

Publikováno v: Journal of Electronic Materials. 10:255-285

Data are presented showing that two different mechanisms control the LPE growth of InGaPAs in the step-cooled technique. An automated growth apparatus, which allows an accurate and reproducible selection of growth times as short as ~9ms, is used to s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3491c5c96b705d9faa68cf5d6dcc2fa3
https://doi.org/10.1007/bf02654912

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Continuous room-temperature photopumped laser operation of visible-spectrum LPE In1-xGaxP1-zAsz(λ ~ 6700 Å)

Autor: B. Vojak, D. L. Keune, Nick Holonyak, D. Finn, J. A. Rossi, S. W. Kirchoefer, E. A. Rezek

Publikováno v: IEEE Journal of Quantum Electronics. 17:161-166

A modified version of the standard step cooled LPE growth process is described for the growth of visible-spectrum In 1-x Ga x P 1-z As z double-heterostructure (DH) lasers on GaAs 1-y P y ( y \sim 0.30 ). The quality of the quaternary epitaxial layer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79a8f80e615ec185b29ef4a8f23dfb83
https://doi.org/10.1109/jqe.1981.1071064

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Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K)

Autor: E. A. Rezek, Nick Holonyak, Bruce A. Vojak, Hisashi Shichijo

Publikováno v: Journal of Applied Physics. 49:69-74

Liquid‐phase epitaxial (LPE) single and multiple thin quaternary layer In1−xGaxP1−zAsz laser diodes (x∼0.13, z∼0.28; λ∼1.1 μm, 77 °K) that exhibit quantum size effects (QSE) are described. LPE quaternary active layers approaching Lz∼

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f5d07b7b5265a491db96297bc8a60f5
https://doi.org/10.1063/1.324370

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Defect‐ and phonon‐assisted tunneling in LPE In1−xGaxP1−zAszDH laser diodes (λ∼1 μm)

Autor: Nick Holonyak, P. D. Wright, E. A. Rezek, M. J. Ludowise, Bruce A. Vojak, H. W. Korb

Publikováno v: Journal of Applied Physics. 48:4287-4291

Tunnel diode I‐V, dI/dV, and d2I/dV2 characteristics are used to examine defect effects and phonon energies in In1−xGaxP1−zAsz double‐heterojunction lasers (λ‐1.1 μm) grown by liquid‐phase epitaxy on InP substrates. Similar to the usual

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::acc8433bce38722690b571cbdcd575b2
https://doi.org/10.1063/1.323416

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Bandfilling in liquid phase epitaxial InP‐In1−xGaxP1−zAsz‐InP quantum‐well heterostructure lasers

Autor: E. A. Rezek, Bruce A. Vojak, Nick Holonyak

Publikováno v: Journal of Applied Physics. 49:5398-5403

The bandfilling and gain behavior of thin (Lz∼400 A) In1−xGaxP1−zAsz (x∼0.13, z∼0.29) layers imbedded in InP p‐n junctions, or on one side of the active region of regular quaternary double heterojunctions (x∼0.09, z∼0.20), are describ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e794d190d3d0945847121e64244945c4
https://doi.org/10.1063/1.324495

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Bandfilling in metalorganic chemical vapor deposited AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well heterostructure lasers

Autor: R. Chin, Russell D. Dupuis, R. M. Kolbas, E. A. Rezek, P. D. Dapkus, Nick Holonyak

Publikováno v: Journal of Applied Physics. 49:5392-5397

Data are presented showing that quantum‐well (Lz∼200 A) AlxGa1−xAs‐GaAs‐AlxGa1−xAs heterostructures, grown by metalorganic chemical vapor deposition, can be operated as lasers on confined‐particle transitions over an unusually large ran

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b0b52a76177d6e40b0ce8d6c631d1933
https://doi.org/10.1063/1.324494

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