Zobrazeno 1 - 10
of 70
pro vyhledávání: '"E A Steinman"'
Autor:
V.A. Skuratov, V. S. Kulikauskas, A. N. Tereshchenko, Dmitry A. Kiselev, A. N. Palagushkin, E. A. Steinman, A. A. Burmistrov, Vladimir Privezentsev, O. S. Zilova, V. V. Zatekin
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:1332-1339
The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO2 film is studied. The implantation of Zn ions is found to result in the formation of amorphous zinc nanoparticles around
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bfab597dedd443d340a30f80dce1ab2
https://doi.org/10.3103/s1062873819110194
https://doi.org/10.3103/s1062873819110194
Autor:
Vladimir Privezentsev, E. A. Steinman, A. V. Makunin, Nikolay N. Kolesnikov, A. N. Tereshchenko
Publikováno v:
Crystallography Reports. 64:451-456
The temperature dependences of structural and phase transformations in quartz successively implanted by zinc and fluorine during annealing in nitrogen have been studied. Plates were doped with 64Zn+ ions to a dose of 5 × 1016 cm–2 with an energy o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6cb0cd5d438401e76959ba1cba021cd
https://doi.org/10.1134/s1063774519030210
https://doi.org/10.1134/s1063774519030210
Autor:
Yu. A. Agafonov, V. V. Zatekin, E. A. Steinman, V. S. Kulikauskas, V. K. Egorov, V. I. Zinenko, A. N. Tereshchenko, Vladimir Privezentsev, Kirill D. Shcherbachev
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:382-386
The surface layer of a SiO2/Si structure implanted with Zn+ and O+ ions and annealed in neutral and inert atmospheres is studied. At first, n-Si(100) silicon plates are oxidized in dry O2 to achieve an oxide-film thickness of 0.2 μm. Then, at room t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6311336a309f80982ec358a8ff9365cb
https://doi.org/10.1134/s1027451019030169
https://doi.org/10.1134/s1027451019030169
Autor:
Vladimir Privezentsev, A. V. Makunin, Vladimir A. Skuratov, E. A. Steinman, V. S. Kulikauskas, V. V. Zatekin, A. N. Palagushkin, Dmitry A. Kiselev, A. N. Tereshchenko
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:326-334
The formation of a zinc-oxide phase in a SiO2 film deposited onto n-type Si substrates grown in the (100) orientation using the Czochralski technique, which is a result of implanting 64Zn+ ions at room temperature, an energy of 50 keV, and a dose of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::205bac39a44ada2fb54d20b7b2888f0b
https://doi.org/10.1134/s102745101902037x
https://doi.org/10.1134/s102745101902037x
Autor:
A. N. Tereshchenko, V. S. Kulikauskas, S. V. Ksenich, A. V. Goryachev, E. A. Steinman, Vladimir Privezentsev, A. V. Makunin, V.A. Skuratov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:893-897
50 keV 64Zn+ ions to a dose of 5 × 1016 cm–2 are implanted into substrates of single-crystal n-type silicon. Then the samples are irradiated at room temperature with 167 MeV 132Xe26+ ions with a fluence ranging from 1 ×1012 up to 5 × 1014 cm–2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d860cf9b22a6aebfa26e8f8a12b9de5e
https://doi.org/10.1134/s1027451018050099
https://doi.org/10.1134/s1027451018050099
Autor:
David Tetelbaum, Alexey Belov, A. A. Nikolskaya, D. A. Pavlov, Alexey Mikhaylov, D. S. Korolev, A. N. Tereshchenko, E. A. Steinman
Publikováno v:
Semiconductors. 52:843-848
The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si+ ion implantation with subsequent annealing is studied. It is shown that the implantation of B+ ions has a significant effect on the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4b859111eacac19deca62b4a5b2514f
https://doi.org/10.1134/s1063782618070229
https://doi.org/10.1134/s1063782618070229
Publikováno v:
Russian Microelectronics. 44:585-589
The complex research of the structure and electronic properties of defects occurring on the bonding border of twist misfit Si(001) wafers of n-type conductivity was carried out by the methods of transmission electron microscopy, deep level transient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ad56e8b8bba8c7830e3ad2d7865892c
https://doi.org/10.1134/s1063739715080107
https://doi.org/10.1134/s1063739715080107
Autor:
S.N. Ksenich, A. N. Palagushkin, A. N. Tereshchenko, Vladimir Privezentsev, E. A. Steinman, V. S. Kulikauskas, A. A. Batrakov
Publikováno v:
Solid State Phenomena. 242:396-401
ZnO nanoparticles (NPs) formed in (-1012) sapphire substrates have been studied. The NPs were formed by implantation of 64Zn+ ions followed by furnace annealing in oxygen atmosphere for 1h at elevated temperatures. The radiation defects and Zn implan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3777c8f8cdc3d8cb90eb8e8fdb9d2886
https://doi.org/10.4028/www.scientific.net/ssp.242.396
https://doi.org/10.4028/www.scientific.net/ssp.242.396
Autor:
V. S. Kulikauskas, A. N. Tereshchenko, E. A. Steinman, N. Yu. Tabachkova, Vladimir Privezentsev, V.A. Skuratov, Dmitry A. Kiselev, Kirill D. Shcherbachev, O. S. Zilova, A. A. Burmistrov
Publikováno v:
Journal of Physics: Conference Series. 1190:012011
The electronic and optical properties of Si doped by Zn diffusion have been studied for a long time. Recently the defect structure and properties of n-Si (111) compensated by Zn during high-temperature diffusion annealing with subsequent quenching we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c10155eb2b272c7212390bb9a6276908
https://doi.org/10.1088/1742-6596/1190/1/012011
https://doi.org/10.1088/1742-6596/1190/1/012011
Publikováno v:
Materials Science Forum. :43-47
The structural defects in the single 6H-SiC crystals grown by the PVT method have been studied by the scanning electron microscopy, Raman scattering and photoluminescence techniques. The formation mechanism of the defects, micropipes and parasitic po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ff0d7d3b0b3ad3fb779ffbfa26442b
https://doi.org/10.4028/www.scientific.net/msf.740-742.43
https://doi.org/10.4028/www.scientific.net/msf.740-742.43