Zobrazeno 1 - 10
of 16
pro vyhledávání: '"E A Pilyuk"'
Autor:
V S Zakhvalinskii, T B Nikulicheva, E A Pilyuk, E Lähderanta, M A Shakhov, O N Ivanov, E P Kochura, A V Kochura, B A Aronzon
Publikováno v:
Materials Research Express, Vol 7, Iss 1, p 015918 (2020)
Charge carriers parameters on a 2D-layer surface for (Cd _1−x−y Zn _x Mn _y ) _3 As _2 ( y = 0.08) (the concentration ${n}_{2D}$ = 1.9 × 10 ^12 cm ^–2 , the effective value of the 2D-layer ${d}_{2D}={n}_{2D}/{n}_{3D}$ = 14.5 nm, the wave vecto
Externí odkaz:
https://doaj.org/article/a5bff82191434a83b7d463315d81d09c
Publikováno v:
Lecture Notes in Civil Engineering ISBN: 9783031204586
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d2c7b614d5263e7cd50dff083bf346
https://doi.org/10.1007/978-3-031-20459-3_45
https://doi.org/10.1007/978-3-031-20459-3_45
Autor:
A. V. Kochura, E. A. Pilyuk, A. P. Kuz’menko, S. F. Marenkin, B. A. Aronzon, A. I. Ril, V. S. Zakhvalinskii, Aung Zaw Htet
Publikováno v:
Inorganic Materials. 55:879-886
Thin (~50 nm) cadmium arsenide films have been grown by magnetron sputtering on single-crystal silicon and sapphire substrates. Using X-ray diffraction, scanning electron microscopy, atomic force microscopy, and Raman spectroscopy, the composition of
Autor:
S. Yu. Gavrilkin, A. V. Kochura, A. P. Kuz’menko, V. S. Zakhvalinskii, V. A. Kulbachinskii, A. F. Knjazev, E. A. Pilyuk, B. A. Aronzon, L. N. Oveshnikov, A. B. Davydov
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 20:134-141
The vapor phase growth of Cd3As2—Zn3As2 (in the following (Cd1−x Znx)3As2 solid solutions process is described. The (Cd0,993 Zn0,007)3As2 solid solution single crystals were synthesized. Scanning electron microscopy and electron diffraction data
Autor:
D. A. Kolesnikov, V. S. Zakhvalinskii, A. A. Morocho, I. Yu. Goncharov, T. B. Nikulicheva, M. N. Yaprintsev, E. A. Pilyuk, S. V. Ivanchikhin, О. V. Glukhov
Плівки арсеніду кадмію на підкладках окисленого кремнію отримані ВЧ-магнетронним розпиленням. Досліджено структуру та морфологію пове
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b26071407f39b7e7494c5c7644f87e1e
https://essuir.sumdu.edu.ua/handle/123456789/78333
https://essuir.sumdu.edu.ua/handle/123456789/78333
Autor:
I. S. Nikulin, V S Voropaev, E A Pilyuk, M Yu Saenko, V B Nikulichev, N I Alfimova, T B Nikulicheva
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 845:012152
The cycle of citric acid production with the formation of gypsum-containing waste was considered and options for processing and utilization of citrogypsum were proposed. The methods obtained include: the use of citrogypsum in the production of buildi
Autor:
A. B. Davydov, B. A. Aronzon, K. I. Kugel, V. M. Pudalov, L. A. Morgun, E. A. Pilyuk, V S Zakhvalinskii, Alexey Suslov, A. P. Kuzmenko, A. V. Kochura, L. N. Oveshnikov
Publikováno v:
Physical Review B. 99
We report an experimental observation of superconductivity in ${\mathrm{Cd}}_{3}{\mathrm{As}}_{2}$ thin films without application of external pressure. The films under study were synthesized by magnetron sputtering. Surface studies suggest that the o
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1014:012044
The magnetic properties of the new semimagnetic semiconductor (Zn1-xFex)3As2 with x < 0.04 have been investigated over a wide temperature range. Single crystals of ZFA were grown using the modified Bridgeman technique. The results of X-ray analyses a
Autor:
L. V. Borisenko, I. M. Golev, D. A. Kolesnikov, A. N. Khmara, V. S. Zakhvalinskii, E. A. Pilyuk, T. V. Prokopova
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 80:1115-1118
Layers of porous silicon (PS), multilayered ZnO films, and heterostructures based on them are obtained. The surface morphology, chemical and phase composition of the PS layers and ZnO films, and the transverse cleavage of ZnO–PS nanocomposite, are
Hopping conduction in single crystals of the diluted magnetic semiconductor (Zn1-xFex)3As2 (x=0.005)
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 889:012033
Single crystals of the diluted magnetic semiconductor (Zn1-x Fe x )3As2 (x = 0.005) were obtained by modified Bridgman method. According to the results of the X-ray powder diffractometry, the material was single-phased and isomorphic and corresponded