Zobrazeno 1 - 10
of 13
pro vyhledávání: '"E A Levchuk"'
Publikováno v:
Informatika, Vol 15, Iss 1, Pp 7-20 (2018)
Numerical modeling of electronic state evolution due to non-uniform external electric field in the structure metal-insulator-semiconductor with solitary donor center is carried out. Considering a nanometer disc-shaped gate as a source of the electric
Externí odkaz:
https://doaj.org/article/28c4005d179f46c49ebcf7a4373f81ee
Autor:
E. A. Levchuk, Leonid Makarenko
Publikováno v:
Semiconductors. 54:1904-1906
The value of exchange energy for near-surface double-donor and double-quantum dot structures under the effect of external electric field has been calculated using unrestricted Hartree–Fock method. The dependences of exchange energy on geometric par
Autor:
Leonid Makarenko, E. A. Levchuk
Publikováno v:
APPLICATION OF MATHEMATICS IN TECHNICAL AND NATURAL SCIENCES: 11th International Conference for Promoting the Application of Mathematics in Technical and Natural Sciences - AMiTaNS’19.
Autor:
Leonid Makarenko, E. A. Levchuk
Publikováno v:
Semiconductors. 50:89-96
The effect of an external electric field on the states of a shallow donor near a semiconductor surface is numerically simulated. A disk-shaped metal gate is considered as an electric-field source. The wavefunctions and energies of bound states are de
Autor:
I. A. Shestakova, A. V. Shestakov, A. B. Kozlov, N. P. Badalyan, G. M. Zverev, E. A. Levchuk, N. N. Semenovsky, M. I. Mit`kin
Publikováno v:
SPIE Proceedings.
The technology for manufacturing active elemen ts for high-power (more than 1 kW) Yb 3+ :YAG disk lasers has been developed. A series of disk activ e elements with a thickness of 200 400 P m, a diameter of 8 15 mm, and a Yb 3+ concentration of 8 15 a
Publikováno v:
Soviet Applied Mechanics. 13:1015-1021
Publikováno v:
Soviet Journal of Quantum Electronics. 7:1071-1075
The technique of multiple frustrated total internal reflection is applied to demonstrate the existence of a surface layer in lithium niobate. The thickness and absorption coefficient of this layer are determined. It is shown that when the surface of
Publikováno v:
Soviet Journal of Quantum Electronics. 8:42-45
The direct search method is proposed as the optimization technique for the design of antireflection coatings without calculation of the derivatives of the objective function. The synthesis procedure is described. Certain specific problems on the anti
Publikováno v:
Soviet Journal of Quantum Electronics. 7:227-230
A study was made of the influence of the radiation wavelength, focusing conditions, and temperature of a sample on the laser damage to SiO2, TiO2, SiOx, TiOx, (x
Publikováno v:
Soviet Journal of Quantum Electronics. 2:167-169
An investigation was made of the surface damage caused by the single-mode radiation of a neodymium-glass laser operating under free-oscillation (λ = 1.06 μ) and giant-pulse (λ = 1.06 and 0.53 μ) conditions. The damage thresholds were identical at