Výsledky vyhledávání - "E A Cherepov"

Autor: E. I. Cherepov, E. G. Tishkovskii, Yu. N. Palyanov, Alexander G. Sokol, V. I. Obodnikov

Publikováno v: Russian Microelectronics. 31:277-281

The effect of isothermal annealing on the depth profiles of nitrogen atoms implanted into synthetic diamonds is studied by secondary-ion mass spectrometry. The annealing is performed under vacuum at 1400°C for 1, 5, or 20 h. It is found that the dep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40ad08f38249687f625214de08bd6a55
https://doi.org/10.1023/a:1020230823633

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Autor: Alexander V. Dovgal, E. I. Cherepov, Genrih R. Grek, B. I. Fomin, Victor V. Kozlov, V. A. Gridchin, A. A. Taskin, S. P. Khabarov, V. M. Lubimsky

Publikováno v: Russian Microelectronics. 31:359-365

A technology is developed for making single-chip diaphragm pressure sensors with polycrystalline-silicon piezoresistive elements on a monocrystalline-silicon substrate. It allows one to produce piezoresistive elements with a conductivity–temperatur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62dc9a3d5e09980dea8548a7861a8bc4
https://doi.org/10.1023/a:1020929808634

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Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation

Autor: E. G. Tishkovskii, V. I. Obodnikov, B. I. Fomin, A. M. Myasnikov, E. I. Cherepov, V. G. Seryapin

Publikováno v: Semiconductors. 31:279-282

The temperature range in which oscillating impurity distributions are formed in heavily boron-doped silicon irradiated with boron ions B+ is found. It is hypothesized that the effect is associated with boron clustering processes which proceed more ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8606b687393ac04abc9ad2908c260ffb
https://doi.org/10.1134/1.1187127

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Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometers

Autor: I. B. Chistokhin, E. I. Cherepov, I. P. Michailovsky, B. I. Fomin

Publikováno v: SPIE Proceedings.

Polycrystalline layers of Si1-xGex of varying germanium fraction, in situ doped with boron, were received by molecular-beam deposition on layers of the silicon oxide and silicon nitride at temperatures

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::43f391dc9e54c05d1a8edc9f4b2526ee
https://doi.org/10.1117/12.517367

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[Problems of improving quality of life for residents]

Autor: E M, Cherepov, P V, Tarkhov, A M, Tsarenko, I I, Shevelev

Publikováno v: Gigiena i sanitariia. (5)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::929fe681994f40f788a3a217b399cda5
https://pubmed.ncbi.nlm.nih.gov/11665520

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[The complex hygienic assessment of environmental status and its effect on the health of the population of a region]

Autor: A M, Bol'shakov, E M, Cherepov, E I, Akimova

Publikováno v: Gigiena i sanitariia. (2)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::a67a70cbb10026e344ee8276617a0fa9
https://pubmed.ncbi.nlm.nih.gov/10349241

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[The epidemiological validation of the MPEL for grain dust in the atmosphere]

Autor: M A, Pinigin, E M, Cherepov, A A, Safiulin, I V, Petrova, L Kh, Mukhambetova, E M, Osipova, A P, Veselov

Publikováno v: Gigiena i sanitariia. (4)

The use of calculating and gravimetric methods for examining the grain dust pollution of the ambient air at the site of an elevator determined the maximum single, mean daily, and mean annual concentrations at different distances from the source of du

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::0e0f130430033beace7eda2dd42f5528
https://pubmed.ncbi.nlm.nih.gov/9721495

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