Zobrazeno 1 - 10
of 109
pro vyhledávání: '"E, Uccelli"'
Autor:
N. Daix, E. Uccelli, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. M. Hartmann, K.-T. Shiu, C.-W. Cheng, M. Krishnan, M. Lofaro, M. Kobayashi, D. Sadana, J. Fompeyrine
Publikováno v:
APL Materials, Vol 2, Iss 8, Pp 086104-086104-6 (2014)
We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation
Externí odkaz:
https://doaj.org/article/d71bcbbb688e47b0bd5052580cedc1c2
Akademický článek
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Autor:
Gerhard Abstreiter, Shivaji Dasgupta, Max Bichler, Matthew Grayson, Matthias Fehr, Anna Fontcuberta i Morral, Lucia Steinke, E. Uccelli
Publikováno v:
physica status solidi (a). 206:1620-1625
The expanding of research in nano-scale systems is essentially driven by interest in the fun-damental physical properties of solid state matter at the nanoscale and the hope to apply them to novel technologi-cal devices. With self-assembled (bottom-u
Publikováno v:
Superlattices and Microstructures. 44:425-430
The mechanism of selective epitaxial growth of InAs quantum dots on (110) AlAs/GaAs cleaved facets has been considered from a theoretical point of view. In particular, the role of the large difference in the diffusion length of In adatoms on GaAs and
Autor:
A. Kress, Gerhard Abstreiter, E. Uccelli, R. Schulz, F. Hofbauer, Johann Bauer, Jonathan J. Finley, Dieter Schuh
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 26:72-76
We report on a new approach for positioning of self-assembled InAs quantum dots on (1 1 0) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in situ cleaved surfaces (cleaved-edge overgrowth) we
Autor:
E. Uccelli, Gerhard Abstreiter, R. Schulz, A. Kress, Jonathan J. Finley, Dieter Schuh, F. Hofbauer, Johann Bauer
Publikováno v:
Applied Physics Letters. 85:4750-4752
We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on previously grown and in situ cleaved substrates (c
Controlled synthesis of InAs wires, dot and twin-dot array configurations by cleaved edge overgrowth
Publikováno v:
Nanotechnology. 19(4)
We present experimental results on the controlled synthesis of InAs ordered nanostructures with three different grades of complexity: nanowires, quantum dot arrays, and double quantum dot arrays. A model for the diffusion of In adatoms on (110) surfa
Autor:
Andrea Forabosco, R. Weinstein, E. Uccelli, George Coukos, Annibale Volpe, Sergio Spinato, A. Botticelli, M. Criscuolo
Publikováno v:
Oral Surgery, Oral Medicine, Oral Pathology. 73:570-574
The increase in incidence of oral discomfort among women in a menopause is probably due to hormone modifications. This study evaluated the efficacy of hormone replacement therapy in 27 postmenopausal patients, aged 48 to 58 years, with oral discomfor
Autor:
G. Gazzani, E Uccelli, Francesco Pasquali, G. B. Fregnan, Giovanni Ricevuti, D. Pasotti, Antonino Mazzone
Publikováno v:
European Journal of Drug Metabolism and Pharmacokinetics. 16:197-201
Dipyridamole is a well known anti-aggregating agent characterized by poor water solubility as well as scant and variable bioavailability. Recently, the compound was complexed with beta-cyclodextrin forming a molecular encapsulation resulting in bette
Autor:
Dieter Schuh, A. Fontcuberta i Morral, E. Uccelli, Max Bichler, Jonathan J. Finley, Johann Bauer, Gerhard Abstreiter
Publikováno v:
Lecture Notes in Nanoscale Science and Technology ISBN: 9780387741901
Strain induced self-assembled quantum dots (QDs) have been extensively studied inthe past decade. Their unique propertiesaremainly derivedfrom the carrier confine-ment leading to atom-like energy level structure [1]. In this context, QDs are nanos-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84556709f57ace5fd63bc4dc5ba497d9
https://doi.org/10.1007/978-0-387-74191-8_2
https://doi.org/10.1007/978-0-387-74191-8_2