Zobrazeno 1 - 10
of 70
pro vyhledávání: '"E, Iervolino"'
Publikováno v:
IEEE Journal of Microelectromechanical Systems, 28(6)
We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO3) nano-film modified gate for nitrogen dioxide (NO2) detection. The device has a suspended circular membrane structure and an integrated micro-heat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9535bc5d1a8e49c0f8842ccf455dce0
http://resolver.tudelft.nl/uuid:a6d85734-05ae-4808-ab45-51a4dbd424f0
http://resolver.tudelft.nl/uuid:a6d85734-05ae-4808-ab45-51a4dbd424f0
Publikováno v:
IEEE Sensors Journal. 17:2814-2821
As more and more proofs show that fine particles (diameter of $2.5~\mu \text{m}$ and below) pose more risk on human health than coarse particles, an increasing need for monitoring fine particles has emerged. A miniaturized sensor designed for measuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c986d260b1b58e35ca5e65e6cbcc71
https://doi.org/10.1109/jsen.2017.2683443
https://doi.org/10.1109/jsen.2017.2683443
Autor:
E. Iervolino, Robert Sokolovskij, Jianwen Sun, Fabio Santagata, Guoqi Zhang, Pasqualina M. Sarro, Zewen Liu
Publikováno v:
IEEE Transactions on Electron Devices, 66(10)
A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO3) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abd84e81f63b2f145b6583c01fe873fe
http://resolver.tudelft.nl/uuid:d75c9dad-a536-453d-81a6-4888a325f851
http://resolver.tudelft.nl/uuid:d75c9dad-a536-453d-81a6-4888a325f851
Publikováno v:
Sensors and Actuators A: Physical. 247:115-124
With the increasing public awareness of the impact of particulate matter (PM) on human health, real-time monitoring of PM exposure level has attracted more interest than ever before. While a great deal of effort has been put into the miniaturization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d77166b6c7781d7baed559d0e1baf8b0
https://doi.org/10.1016/j.sna.2016.05.036
https://doi.org/10.1016/j.sna.2016.05.036
Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching
Autor:
Fabio Santagata, Guoqi Zhang, E. Iervolino, Robert Sokolovskij, S. Li, Guoyi Zhang, Pasqualina M. Sarro, Jianwen Sun
Publikováno v:
Procedia Engineering, 168
A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O2 plasma using ICP-RIE etcher followed by wet etching of the oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31282091b2704e01f86c0c776472cfa9
Autor:
Fabio Santagata, Fei Wang, Jian Zhang, Hongyu Yu, E. Iervolino, Changhui Zhao, Robert Sokolovskij, Guoqi Zhang, Pasqualina M. Sarro
Publikováno v:
Sensors and Actuators B: Chemical: international journal devoted to research and development of physical and chemical transducers, 274
AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68fa2c4fae19f87af96ecd1b55484fd8
http://resolver.tudelft.nl/uuid:016c7d54-2ab8-4e07-b055-70c54934bd64
http://resolver.tudelft.nl/uuid:016c7d54-2ab8-4e07-b055-70c54934bd64
Autor:
Fabio Santagata, Michele Riccio, Jia Wei, Andrea Irace, Pasqualina M. Sarro, Giovanni Breglio, A.W. van Herwaarden, E. Iervolino
Publikováno v:
Sensors and Actuators A: Physical. 190:6-12
This paper investigates the temperature dependence of the resonance frequency for locally heated cantilever beams and proposes a solution to minimize it. In the first part of the paper a theoretical study, supported by simulations, is carried out in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73834e58a4cd23969968afbe728ad0af
https://doi.org/10.1016/j.sna.2012.10.008
https://doi.org/10.1016/j.sna.2012.10.008
Autor:
E. Iervolino, Fei Wang, Robert Sokolovskij, Pasqualina M. Sarro, Changhui Zhao, Guoqi Zhang, Hongyu Yu, Fabio Santagata
Publikováno v:
Proceedings, Vol 1, Iss 4, p 463 (2017)
AlGaN/GaN high electron mobility transistor (HEMT)-sensor with a catalytic Pt-gate is fabricated and tested for toxic H2S gas detection. AlGaN/GaN was chosen to extend the sensor detection range and to be able to operate at temperatures beyond those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4290d7fcd97c619c2ead81e21f6e8e6
https://www.mdpi.com/2504-3900/1/4/463
https://www.mdpi.com/2504-3900/1/4/463
Autor:
Robert Sokolovskij, E. Iervolino, Fei Wang, Guoqi Zhang, Changhui Zhao, Fabio Santagata, Pasqualina M. Sarro, Hongyu Yu
Publikováno v:
Proceedings of IEEE Sensors Conference 2017
This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b94ccf7c8f5c9a9bc9d644e24a126fb1
https://doi.org/10.1109/icsens.2017.8234419
https://doi.org/10.1109/icsens.2017.8234419
Autor:
T. Rossi, J.F. Creemer, Hugo Schellevis, Pasqualina M. Sarro, Luigi Mele, E. Iervolino, Fabio Santagata, A.T. Tran, M. Mihailovic
Publikováno v:
Sensors and Actuators A: Physical. 188:173-180
This paper presents a fabrication process for high-temperature MEMS microhotplates that uses sputtered molybdenum as a conductive material. Molybdenum has a high melting point (2693 °C, bulk) and is simpler to deposit and pattern in larger series th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::135aced3a3bb835ab884013c7e7fc4cd
https://doi.org/10.1016/j.sna.2011.11.023
https://doi.org/10.1016/j.sna.2011.11.023