Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Dzhumaev, B. R."'
Autor:
Dzhumaev, B. R.
Publikováno v:
Semiconductors. Nov99, Vol. 33 Issue 11, p1247. 4p.
Autor:
Dzhumaev, B. R.
Publikováno v:
Semiconductors. Jun98, Vol. 32 Issue 6, p575. 5p.
Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to car
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http://dspace.nbuv.gov.ua/handle/123456789/117932
http://dspace.nbuv.gov.ua/handle/123456789/117932
Publikováno v:
Semiconductors; Aug97, Vol. 31 Issue 8, p773, 4p
Autor:
Korsunskaya, N. E., Kaganovich, E. B., Khomenkova, L. Y., Bulakh, B. M., Dzhumaev, B. R., Beketov, G. V., Manoilov, E. G.
Publikováno v:
Applied Surface Science; 2000, Vol. 166 Issue: 1 p349-353, 5p
Publikováno v:
Microelectronic Engineering; 2000, Vol. 51 Issue: 1 p485-493, 9p
Autor:
Torchinskaya, T. V., Karabaev, A. G., Korsunskaya, N. E., Dzhumaev, B. R., Prokopenko, I. V., Sheinkman, M. K.
Publikováno v:
Journal of Applied Spectroscopy; November 1990, Vol. 53 Issue: 5 p1161-1166, 6p
Publikováno v:
ResearcherID
Scopus-Elsevier
Scopus-Elsevier
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Autor:
Khomenkova, L. Y., Baran, N. P., Dzhumaev, B. R., N. Korsunska, Torchinskaya, T. V., Goldstein, Y., Savir, E., Many, A.
Publikováno v:
ResearcherID
Scopus-Elsevier
Scopus-Elsevier
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Publikováno v:
Scopus-Elsevier
ResearcherID
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