Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Dzhagan VM"'
Autor:
Waurisch C, Hickey SG, Dzhagan VM, Yukhymchuk VO, Lytvyn OS, Valakh M, Lehmann D, Zahn DRT, Khodasevich IA, Chursanova MV
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 2, Pp 403-409 (2009)
Abstract Nanostructured silver films have been prepared by thermal deposition on silicon, and their properties as SERS substrates investigated. The optimal conditions of the post-growth annealing of the substrates were established. Atomic force micro
Externí odkaz:
https://doaj.org/article/b1c9187d172e4867828214d0691e768b
Akademický článek
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Akademický článek
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Autor:
Kapush OA; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine., Dzhagan VM; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine.; Physics Department, Taras Shevchenko National University of Kyiv, 60 Volodymyrs'ka Str., 01601, Kyiv, Ukraine., Mazur NV; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine., Havryliuk YO; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine.; Semiconductor Physics, Chemnitz University of Technology, D-09107, Chemnitz, Germany.; Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107, Chemnitz, Germany., Karnaukhov A; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine., Redko RA; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine.; State University of Telecommunications, 7 Solomenska Str., 03680, Kyiv, Ukraine., Budzulyak SI; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine., Boruk S; Yurii Fedkovich Chernivtsi National University, 25, Lesia Ukrainka Str., 58000, Chernivtsi, Ukraine., Babichuk IS; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine.; Faculty of Intelligent Manufacturing, Wuyi University, Jiangmen, 529020, PR China., Danylenko MI; Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Kyiv, Ukraine., Yukhymchuk VO; V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine.
Publikováno v:
Heliyon [Heliyon] 2023 May 06; Vol. 9 (5), pp. e16037. Date of Electronic Publication: 2023 May 06 (Print Publication: 2023).
Autor:
Milekhin IA; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany., Anikin KV; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Rahaman M; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany., Rodyakina EE; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Duda TA; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Saidzhonov BM; Department of Chemistry, Moscow State University, Moscow, Russia., Vasiliev RB; Department of Chemistry, Moscow State University, Moscow, Russia., Dzhagan VM; V.E. Lashkaryov Institute of Semiconductor Physics, UA-03028 Kiev, Ukraine., Milekhin AG; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Batsanov SA; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Gutakovskii AK; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Latyshev AV; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Zahn DRT; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany.
Publikováno v:
The Journal of chemical physics [J Chem Phys] 2020 Oct 28; Vol. 153 (16), pp. 164708.
Autor:
Milekhin IA; Semiconductor Physics, Chemnitz University of Technology D-09107 Chemnitz Germany ilya.milekhin@physik.tu-chemnitz.de., Rahaman M; Semiconductor Physics, Chemnitz University of Technology D-09107 Chemnitz Germany ilya.milekhin@physik.tu-chemnitz.de., Anikin KV; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Rodyakina EE; Novosibirsk State University Novosibirsk Russia.; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Duda TA; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Saidzhonov BM; Department of Chemistry, Moscow State University Moscow Russia.; Department of Material Science, Moscow State University Moscow Russia., Vasiliev RB; Department of Chemistry, Moscow State University Moscow Russia.; Department of Material Science, Moscow State University Moscow Russia., Dzhagan VM; V.E. Lashkaryov Institute of Semiconductor Physics UA-03028 Kiev Ukraine., Milekhin AG; Novosibirsk State University Novosibirsk Russia.; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Latyshev AV; Novosibirsk State University Novosibirsk Russia.; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Zahn DRT; Semiconductor Physics, Chemnitz University of Technology D-09107 Chemnitz Germany ilya.milekhin@physik.tu-chemnitz.de.
Publikováno v:
Nanoscale advances [Nanoscale Adv] 2020 Oct 07; Vol. 2 (11), pp. 5441-5449. Date of Electronic Publication: 2020 Oct 07 (Print Publication: 2020).
Autor:
Rahaman M; Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany. mahfujur.rahaman@physik.tu-chemnitz.de., Milekhin AG; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia and Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Mukherjee A; Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany. mahfujur.rahaman@physik.tu-chemnitz.de., Rodyakina EE; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia and Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Latyshev AV; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia and Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Dzhagan VM; Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany. mahfujur.rahaman@physik.tu-chemnitz.de and Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine., Zahn DRT; Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany. mahfujur.rahaman@physik.tu-chemnitz.de.
Publikováno v:
Faraday discussions [Faraday Discuss] 2019 May 01; Vol. 214, pp. 309-323. Date of Electronic Publication: 2019 Mar 04.
Autor:
Milekhin AG; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia.; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Kuznetsov SA; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia.; Rzhanov Institute of Semiconductor Physics RAS, Novosibirsk Branch 'TDIAM', Lavrentiev Ave. 2/1, Novosibirsk 630090, Russia., Milekhin IA; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia.; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Sveshnikova LL; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Duda TA; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Rodyakina EE; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia.; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Latyshev AV; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia.; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Dzhagan VM; V. E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, Prospekt Nauky 41, 03028 Kyiv, Ukrain., Zahn DRT; Semiconductor Physics, Technische Universitaet Chemnitz, 09126, Chemnitz, Germany.
Publikováno v:
Beilstein journal of nanotechnology [Beilstein J Nanotechnol] 2018 Oct 05; Vol. 9, pp. 2646-2656. Date of Electronic Publication: 2018 Oct 05 (Print Publication: 2018).
Autor:
Milekhin AG; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090, Novosibirsk, Russia. milekhin@isp.nsc.ru., Rahaman M, Rodyakina EE, Latyshev AV, Dzhagan VM, Zahn DRT
Publikováno v:
Nanoscale [Nanoscale] 2018 Feb 08; Vol. 10 (6), pp. 2755-2763.