Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM

Autor: Hong, Seok-Woo, Kang, Seung-Mo, Choi, In-Hyuk, Jung, Seung-Uk, Park, Dong-Sik, Kim, Kyoung-Ho, Choi, Yong-Jin, Lee, Tae-Woo, Lee, Haebum, Cho, In-Soo

Publikováno v: AMC 2015 – Advanced Metallization Conference

In order to resolve the Al void formation originated from the severe stress issues in dynamic random access memory (DRAM), double-deposited-aluminum (DDA) layer process was proposed. This novel metallization process can be effectively and simply perf

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Ultrathin CaTiO3 Capacitors: Physics and Application

Autor: Krause, Andreas

Scaling of electronic circuits from micro- to nanometer size determined the incredible development in computer technology in the last decades. In charge storage capacitors that are the largest components in dynamic random access memories (DRAM), diel

Externí odkaz: https://tud.qucosa.de/id/qucosa%3A27069
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Ultra thin oxide films for dielectric and resistive memory applications

Autor: Schmelzer, Sebastian

Publikováno v: Aachen : Hut 131 S. : Ill., graph. Darst. (2013). = Zugl.: Aachen, Techn. Hochsch., Diss., 2013

The scaling of solid state memory demands an ever continuing progress in memory device concepts as well as utilization of materials with properties superior to the state of the art. Since its invention dynamic random access memory (DRAM) is one of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______791::fd5341c48594c913642c9fff5ae8d034
https://publications.rwth-aachen.de/record/209617

Impact of the interface on the paraelectric to ferroelectric phase transition in expitaxial BaSrTiO 3 thin film capacitors

Autor: Plonka, Rafael

Publikováno v: Jülich : Forschungszentrum Jülich, Zentralbibl., Verl. [u.a.], Berichte des Forschungszentrums Jülich 4266, X, 116 S. : graph. Darst. (2007). = Zugl.: Aachen, Techn. Hochsch., Diss., 2007

The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a drastic reduction of the area of the incorporated storage capacitors. As a consequence, the film thickness of the used dielectrics has to be decreased

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______791::d000af1943ff1eeddc68ecf7c825cd50
https://publications.rwth-aachen.de/record/51300

Konzepte zur lithographieunabhängigen Skalierung von vertikalen Kurzkanal-MOS-Feldeffekt-Transistoren und deren Bewertung

Autor: Schulz, Thomas

In der vorliegenden Arbeit werden ausgehend von der Diskussion der bekannten konventionellen planaren MOSFETs neuartige Konzepte für zukünftige vertikale MOSFETs vorgestellt. Ein Überblick über die internationalen Aktivitäten auf dem Gebiet der

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::cbe286845aa28b22e9b71ea7b08bbed6
http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-4177