Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Dwight R. Luhman"'
Autor:
Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward, Malcolm S. Carroll, Dwight R. Luhman
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-4 (2022)
Externí odkaz:
https://doaj.org/article/ce1361f46f8440b68b7370a38f0279ac
Autor:
Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward, Malcolm S. Carroll, Dwight R. Luhman
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Spin-orbit coupling in gate-defined quantum dots in silicon metal-oxide semiconductors provides a promising route for electrical control of spin qubits. Here, the authors demonstrate that intervalley spin–orbit interaction enables fast singlet–tr
Externí odkaz:
https://doaj.org/article/86e100879aa34965a9c75ae65b4b0006
Publikováno v:
PRX Quantum, Vol 3, Iss 4, p 040320 (2022)
Spin-1/2^{119}Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect that electrons can easily shuttle from one Sn atom to ano
Externí odkaz:
https://doaj.org/article/62fff76b107d4134850df6279199cfaf
Autor:
Troy A. Hutchins-Delgado, Andrew J. Miller, Robin Scott, Ping Lu, Dwight R. Luhman, Tzu-Ming Lu
Publikováno v:
ACS Applied Electronic Materials. 4:4482-4489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce4e0b3e86e003744e1de76a4952dae6
https://doi.org/10.1021/acsaelm.2c00733
https://doi.org/10.1021/acsaelm.2c00733
Autor:
Andrew J. Miller, Will J. Hardy, Dwight R. Luhman, Mitchell Brickson, Andrew Baczewski, Chia-You Liu, Jiun-Yun Li, Michael P. Lilly, Tzu-Ming Lu
Publikováno v:
Physical Review B. 106
Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a measurement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::356a69c01799cd003c846a0ec9e1a7af
https://doi.org/10.1103/physrevb.106.l121402
https://doi.org/10.1103/physrevb.106.l121402
Autor:
Natalie D. Foster, Andrew J. Miller, Troy A. Hutchins-Delgado, Christopher M. Smyth, Michael C. Wanke, Tzu-Ming Lu, Dwight R. Luhman
Publikováno v:
Applied Physics Letters. 120
The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here we extend activation studies into the low-densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f4e764057972c2234a6036291d7db72
https://doi.org/10.1063/5.0094900
https://doi.org/10.1063/5.0094900
Autor:
Ryan M, Jock, N Tobias, Jacobson, Martin, Rudolph, Daniel R, Ward, Malcolm S, Carroll, Dwight R, Luhman
Publikováno v:
Nature communications. 13(1)
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7db270c01bc752031bdc151124c47ed6
https://pubmed.ncbi.nlm.nih.gov/35585054
https://pubmed.ncbi.nlm.nih.gov/35585054
Autor:
Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward, Malcolm S. Carroll, Dwight R. Luhman
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40824ccae4e0a10ff6c4c89845c4bd84
Autor:
Will J Hardy, C Thomas Harris, Yi-Hsin Su, Yen Chuang, Jonathon Moussa, Leon N Maurer, Jiun-Yun Li, Tzu-Ming Lu, Dwight R Luhman
Publikováno v:
Nanotechnology; 5/24/2019, Vol. 30 Issue 21, p1-1, 1p