Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Duy Vu Pham"'
Autor:
Maren Kasischke, Ersoy Subaşı, Duy-Vu Pham, Evgeny L. Gurevich, Claudia Bock, Andreas Ostendorf, Ulrich Kunze
Publikováno v:
Applied Surface Science. 478:299-303
The aim of this study is to assess femtosecond laser patterning of graphene in air and in vacuum for the application as source and drain electrodes in thin-film transistors (TFTs). The analysis of the laser-patterned graphene with scanning electron m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96919eb1fb0242e643db1a1de9cda2c8
https://doi.org/10.1016/j.apsusc.2019.01.198
https://doi.org/10.1016/j.apsusc.2019.01.198
Publikováno v:
Journal of Materials Chemistry C. 7:7627-7635
We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFTs) at varied concentrations. As the Ga (Y) content in the In1.0GaxOy (In1.0YxOy) channel ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0910a776a788c0a5769b6da345a6a5f
https://doi.org/10.1039/c8tc06270f
https://doi.org/10.1039/c8tc06270f
Autor:
Yen-Yi Huang, Shin-Chuan Chiang, Yu-Hsien Chen, Der-Chun Wu, Kuo-Hsing Tseng, Yi-Hsien Lin, Hsi-Ming Chang, Duy-Vu Pham, Kuo-Hui Su, Marko Marinkovic, Dennis Weber, Alexey Merkulov, Ralf Anselmann
Publikováno v:
SID Symposium Digest of Technical Papers. 49:125-127
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18359de2b7373f86b7de08d35c270ba1
https://doi.org/10.1002/sdtp.12499
https://doi.org/10.1002/sdtp.12499
Autor:
Takashi Kakimura, Ryo Takata, Satoshi Suzuki, Anita Neumann, Duy-Vu Pham, Dennis Weber, Shigeki Minami, Ralf Anselmann, Mitsumasa Kodama, Yoshitaka Kitamura
Publikováno v:
Journal of the Society for Information Display. 24:381-385
An indium oxide-based precursor solution has been developed by spin coating method. In order to apply this material to mass production, material, process, and equipment optimizations for slot die coating have been implemented. Slot die coating is a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053085402f24bd3d72e16850e6cc75ed
https://doi.org/10.1002/jsid.450
https://doi.org/10.1002/jsid.450
Autor:
Yoshitaka Kitamura, Takashi Kakimura, Duy-Vu Pham, Mitsumasa Kodama, Ralf Anselmann, Anita Neumann, Satoshi Suzuki, Dennis Weber, Ryo Takata, Shigeki Minami
Publikováno v:
SID Symposium Digest of Technical Papers. 47:326-329
An indium oxide based precursor solution has been developed by spin-coating method. In order to apply this material to a mass production, material, process and equipment optimizations for slot die coating have been implemented. Slot die coating is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::626d9e1ed666b776af719aa0c15f85f3
https://doi.org/10.1002/sdtp.10669
https://doi.org/10.1002/sdtp.10669
Akademický článek
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Akademický článek
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Autor:
Ryo Takata, Duy Vu Pham, Joris Maas, Jan-Laurens van der Steen, Ralf Anselmann, Anita Neumann, Ilias Katsouras, Gerwin H. Gelinck, Marko Marinkovic
Publikováno v:
SID Symposium Digest of Technical Papers, 1, 48, 169-172
Solution type metal-oxide semiconductor was processed on mass-production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b86fd58e5be12d3ba6cdd2be33c75df5
http://resolver.tudelft.nl/uuid:7738627b-e884-4194-8c1f-256e98c9d4e4
http://resolver.tudelft.nl/uuid:7738627b-e884-4194-8c1f-256e98c9d4e4
Autor:
Alexey Merkulov, Dennis Weber, Duy Vu Pham, Niels Benson, Sonja Merkulov, Sebastian Meyer, Roland Schmechel
Publikováno v:
ACS applied materialsinterfaces. 9(3)
Semiconductor inks containing an indium-based oxo alkoxide precursor material were optimized regarding rheology requirements for a commercial 10 pL inkjet printhead. The rheological stability is evaluated by measuring the dynamic viscosity of the for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac4148990d3d54d06721755a38167913
https://pubmed.ncbi.nlm.nih.gov/28032746
https://pubmed.ncbi.nlm.nih.gov/28032746
Autor:
Paul Heremans, Silviu Botnaras, Jan Genoe, Soeren Steudel, Dennis Weber, Kris Myny, Sarah Schols, Duy-Vu Pham, Jan Vanfleteren, Maarten Rockele, Dieter Cuypers, Tom Sterken, Juergen Steiger, Bas van der Putten
Publikováno v:
Journal of the Society for Information Display. 20:499-507
High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250''C, are realized and reported. Saturation mobilities exceeding 2cmV(Vs) and on-to-off c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa7b6ccf3ae0f911c404be2a8b80acd
https://doi.org/10.1002/jsid.114
https://doi.org/10.1002/jsid.114