HEMT AlInAs/InGaAs pseudomorphique sur substrat d'InP de longueur de grille de 30nm et de Ft = 450GHz

Autor: Wichmann, Nicolas, Shchepetov, A., Duszynski, I., Roelens, Yannick, Wallart, X., Dambrine, Gilles, Cappy, A., Bollaert, S.

Publikováno v: Actes des 15èmes Journées Nationales Microondes, JNM 2007
15èmes Journées Nationales Microondes, JNM 2007
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D20

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::96310c86c623d85bc1a50e1ac67dfb07
https://hal.archives-ouvertes.fr/hal-00284471

HEMTs for millimeter and sub-millimeter waves applications

Autor: Bollaert, S., Cappy, A., Dambrine, G., Duszynski, I., Roelens, Y., Shchepetov, A., Wallart, X., Wieszt, A.

Publikováno v: GDR THz
GDR THz, 2005, Montpellier, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3ea864ef1556a5fbcf45b3fdd101c90c
https://hal.archives-ouvertes.fr/hal-00125314

HEMT In0.52Al0.48As/In0.53Ga0.47As double-grille de longueur 100nm

Autor: Wichmann, N., Duszynski, I., Bollaert, S., Wallart, X., Cappy, A.

Publikováno v: Actes des 14èmes Journées Nationales Microondes
Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c27dfb002701c2ad2223b69ad28a79bc
https://hal.archives-ouvertes.fr/hal-00126724

Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate

Autor: Wichmann, N., Duszynski, I., Parenty, T., Bollaert, S., Mateos, J., Wallart, X., Cappy, A.

Publikováno v: Wichmann, N. ; Duszynski, I. ; Parenty, T. ; Bollaert, S. ; Mateos, J. ; Wallart, X. ; Cappy, A. (2004) Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As doublegate HEMTs with sub-micron gate lengths. These devices present a maximum extrinsic transconductance gm of 2650 mS/mm with a corresponding drain curr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24bd8b4a9e510a08a3b6559ce932c64f

InAlAs/InGaAs double gate HEMTS with high extrinsic transconductance

Autor: Wichmann, N., Duszynski, I., Parenty, T., Bollaert, S., Mateos, J., Wallart, X., Cappy, A.

Publikováno v: Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM-IEEE

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6efd26cf83f9666855f5ba54608d3445
https://hal.archives-ouvertes.fr/hal-00133877